SI9407BDY-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 4.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.2A, 10V
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 30 V
| Anzahl | Preis |
|---|---|
| 2500+ | 0.72 EUR |
| 5000+ | 0.67 EUR |
| 7500+ | 0.65 EUR |
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Technische Details SI9407BDY-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 60V 4.7A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 3.2A, 10V, Power Dissipation (Max): 2.4W (Ta), 5W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 30 V.
Weitere Produktangebote SI9407BDY-T1-GE3 nach Preis ab 0.73 EUR bis 2.78 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SI9407BDY-T1-GE3 | Hersteller : Siliconix |
P-MOSFET 4.7A 60V 5W 0.12Ω Equivalent SI9407AEY SI9407BDY TSI9407bdy Anzahl je Verpackung: 10 Stücke |
auf Bestellung 190 Stücke: Lieferzeit 7-14 Tag (e) |
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SI9407BDY-T1-GE3 | Hersteller : Vishay |
P-MOSFET 4.7A 60V 5W 0.12Ω Equivalent SI9407AEY SI9407BDY TSI9407bdy Anzahl je Verpackung: 10 Stücke |
auf Bestellung 14 Stücke: Lieferzeit 7-14 Tag (e) |
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SI9407BDY-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs -60V Vds 20V Vgs SO-8 |
auf Bestellung 8117 Stücke: Lieferzeit 10-14 Tag (e) |
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SI9407BDY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 60V 4.7A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 3.2A, 10V Power Dissipation (Max): 2.4W (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 30 V |
auf Bestellung 11437 Stücke: Lieferzeit 10-14 Tag (e) |
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SI9407BDY-T1-GE3 | Hersteller : Siliconix |
P-MOSFET 4.7A 60V 5W 0.12Ω Equivalent SI9407AEY SI9407BDY TSI9407bdy Anzahl je Verpackung: 10 Stücke |
auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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| SI9407BDY-T1-GE3 | Hersteller : Vishay BC Components |
P-канальний ПТ, Udss, В = -60, Id = 4,7 А, Ptot, Вт = 5, Тип монт. = вивідний, Ciss, пФ @ Uds, В = 600 @ 30, Qg, нКл = 22 @ 10 В, Rds = 120 мОм @ 3,2 A, 10 В, Tексп, °C = -55...+150, Ugs(th) = 3 В @ 250 мкА,... Група товару: Транзистори Корпус: SOICN-8 Од Anzahl je Verpackung: 2500 Stücke |
verfügbar 1 Stücke: |
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| SI9407BDY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 60V 3.2A 8-Pin SOIC N T/R Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |