| Anzahl | Privatkunde |
|---|---|
| 205+ | 0.86 EUR |
| 250+ | 0.81 EUR |
| 500+ | 0.76 EUR |
| 1000+ | 0.71 EUR |
| 2500+ | 0.69 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI9435BDY-T1-GE3 Vishay
Description: MOSFET P-CH 30V 4.1A 8SO, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 1.3W (Ta), Rds On (Max) @ Id, Vgs: 42mOhm @ 5.7A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V.
Weitere Produktangebote SI9435BDY-T1-GE3 nach Preis ab 0.7 EUR bis 2.37 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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SI9435BDY-T1-GE3 | Vishay Siliconix |
 Description: MOSFET P-CH 30V 4.1A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 5.7A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V |
auf Bestellung 2371 Stücke: Lieferzeit 10-14 Tag (e) |
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SI9435BDY-T1-GE3 | Vishay Semiconductors |
MOSFETs 30V 5.7A 2.5W 42mohm @ 10V |
auf Bestellung 3620 Stücke: Lieferzeit 10-14 Tag (e) |
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SI9435BDY-T1-GE3 | VISHAY |
Description: VISHAY - SI9435BDY-T1-GE3 - P CHANNEL MOSFET tariffCode: 85412900 MSL: MSL 1 - Unlimited productTraceability: Yes-Date/Lot Code rohsCompliant: YES Anzahl der Pins: 8Pin(s) euEccn: NLR isCanonical: Y hazardous: false Drain-Source-Durchgangswiderstand: 42mohm rohsPhthalatesCompliant: YES Qualifikation: - directShipCharge: 25 usEccn: EAR99 |
auf Bestellung 2606 Stücke: Lieferzeit 14-21 Tag (e) |
|
| SI9435BDY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 4.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5.7A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Description: MOSFET P-CH 30V 4.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5.7A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
auf Bestellung 2371 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.2 EUR |
| 15+ | 1.48 EUR |
| 100+ | 1.02 EUR |
| 500+ | 0.82 EUR |
| 1000+ | 0.76 EUR |
| SI9435BDY-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs 30V 5.7A 2.5W 42mohm @ 10V
MOSFETs 30V 5.7A 2.5W 42mohm @ 10V
auf Bestellung 3620 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.28 EUR |
| 10+ | 1.46 EUR |
| 100+ | 1.05 EUR |
| 500+ | 0.9 EUR |
| 1000+ | 0.77 EUR |
| 2500+ | 0.7 EUR |
| SI9435BDY-T1-GE3 |
|
Hersteller: VISHAY
Description: VISHAY - SI9435BDY-T1-GE3 - P CHANNEL MOSFET
tariffCode: 85412900
MSL: MSL 1 - Unlimited
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
Anzahl der Pins: 8Pin(s)
euEccn: NLR
isCanonical: Y
hazardous: false
Drain-Source-Durchgangswiderstand: 42mohm
rohsPhthalatesCompliant: YES
Qualifikation: -
directShipCharge: 25
usEccn: EAR99
Description: VISHAY - SI9435BDY-T1-GE3 - P CHANNEL MOSFET
tariffCode: 85412900
MSL: MSL 1 - Unlimited
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
Anzahl der Pins: 8Pin(s)
euEccn: NLR
isCanonical: Y
hazardous: false
Drain-Source-Durchgangswiderstand: 42mohm
rohsPhthalatesCompliant: YES
Qualifikation: -
directShipCharge: 25
usEccn: EAR99
auf Bestellung 2606 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 106+ | 2.37 EUR |
| 139+ | 1.67 EUR |
| 147+ | 1.46 EUR |
| 157+ | 1.37 EUR |
| 166+ | 1.3 EUR |