auf Bestellung 4249 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 205+ | 0.72 EUR |
| 250+ | 0.67 EUR |
| 500+ | 0.62 EUR |
| 1000+ | 0.58 EUR |
| 2500+ | 0.54 EUR |
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Technische Details SI9435BDY-T1-GE3 Vishay
Description: MOSFET P-CH 30V 4.1A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), Rds On (Max) @ Id, Vgs: 42mOhm @ 5.7A, 10V, Power Dissipation (Max): 1.3W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V.
Weitere Produktangebote SI9435BDY-T1-GE3 nach Preis ab 0.59 EUR bis 1.92 EUR
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SI9435BDY-T1-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET P-CH 30V 4.1A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 5.7A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V |
auf Bestellung 2371 Stücke: Lieferzeit 10-14 Tag (e) |
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SI9435BDY-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs 30V 5.7A 2.5W 42mohm @ 10V |
auf Bestellung 3620 Stücke: Lieferzeit 10-14 Tag (e) |
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SI9435BDY-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SI9435BDY-T1-GE3 - P CHANNEL MOSFET tariffCode: 85412900 MSL: MSL 1 - Unlimited productTraceability: Yes-Date/Lot Code rohsCompliant: YES Anzahl der Pins: 8Pin(s) euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - directShipCharge: 25 usEccn: EAR99 |
auf Bestellung 3319 Stücke: Lieferzeit 14-21 Tag (e) |
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SI9435BDY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 4.1A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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| SI9435BDY-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -5.7A; Idm: -30A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -5.7A Pulsed drain current: -30A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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SI9435BDY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 4.1A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 5.7A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V |
Produkt ist nicht verfügbar |
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| SI9435BDY-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -5.7A; Idm: -30A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -5.7A Pulsed drain current: -30A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |