SI9933CDY-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4A 8SOIC
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.8A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 20V
Power - Max: 3.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.4V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.48 EUR |
| 5000+ | 0.44 EUR |
| 7500+ | 0.43 EUR |
| 12500+ | 0.4 EUR |
| 17500+ | 0.39 EUR |
| 25000+ | 0.37 EUR |
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Technische Details SI9933CDY-T1-GE3 Vishay Siliconix
Description: MOSFET 2P-CH 20V 4A 8SOIC, Rds On (Max) @ Id, Vgs: 58mOhm @ 4.8A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 4A, Drain to Source Voltage (Vdss): 20V, Power - Max: 3.1W, Technology: MOSFET (Metal Oxide), Operating Temperature: -50°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Part Status: Active, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 1.4V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote SI9933CDY-T1-GE3 nach Preis ab 0.43 EUR bis 1.93 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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SI9933CDY-T1-GE3 | Vishay Semiconductors |
MOSFETs -20V Vds 12V Vgs SO-8 |
auf Bestellung 48508 Stücke: Lieferzeit 10-14 Tag (e) |
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SI9933CDY-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2P-CH 20V 4A 8SOIC Rds On (Max) @ Id, Vgs: 58mOhm @ 4.8A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 10V Current - Continuous Drain (Id) @ 25°C: 4A Drain to Source Voltage (Vdss): 20V Power - Max: 3.1W Technology: MOSFET (Metal Oxide) Operating Temperature: -50°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1.4V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V |
auf Bestellung 88147 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI9933CDY-T1-GE3 | Vishay |
Transistor 2xP-Channel MOSFET; 20V; 12V; 94mOhm; 4A; 3,1W; -50°C ~ 150°C; SI9933CDY TSI9933cdy Anzahl je Verpackung: 10 Stücke |
auf Bestellung 1163 Stücke: Lieferzeit 7-14 Tag (e) |
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| SI9933CDY-T1-GE3 |
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Hersteller: Vishay Semiconductors
MOSFETs -20V Vds 12V Vgs SO-8
MOSFETs -20V Vds 12V Vgs SO-8
auf Bestellung 48508 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.93 EUR |
| 10+ | 1.2 EUR |
| 100+ | 0.79 EUR |
| 500+ | 0.61 EUR |
| 1000+ | 0.55 EUR |
| 2500+ | 0.48 EUR |
| 5000+ | 0.43 EUR |
| SI9933CDY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4A 8SOIC
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.8A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 20V
Power - Max: 3.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.4V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Description: MOSFET 2P-CH 20V 4A 8SOIC
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.8A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 20V
Power - Max: 3.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.4V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
auf Bestellung 88147 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 1.93 EUR |
| 18+ | 1.19 EUR |
| 100+ | 0.79 EUR |
| 500+ | 0.61 EUR |
| 1000+ | 0.55 EUR |
| SI9933CDY-T1-GE3 |
|
Hersteller: Vishay
Transistor 2xP-Channel MOSFET; 20V; 12V; 94mOhm; 4A; 3,1W; -50°C ~ 150°C; SI9933CDY TSI9933cdy
Anzahl je Verpackung: 10 Stücke
Transistor 2xP-Channel MOSFET; 20V; 12V; 94mOhm; 4A; 3,1W; -50°C ~ 150°C; SI9933CDY TSI9933cdy
Anzahl je Verpackung: 10 Stücke
auf Bestellung 1163 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 40+ | 1.05 EUR |