SI9945BDY-T1-GE3 Vishay Semiconductors
| Anzahl | Preis |
|---|---|
| 3+ | 1.39 EUR |
| 10+ | 1.14 EUR |
| 100+ | 0.89 EUR |
| 500+ | 0.75 EUR |
| 1000+ | 0.61 EUR |
| 2500+ | 0.57 EUR |
| 5000+ | 0.55 EUR |
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Technische Details SI9945BDY-T1-GE3 Vishay Semiconductors
Description: MOSFET 2N-CH 60V 5.3A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 5.3A, Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V, Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC.
Weitere Produktangebote SI9945BDY-T1-GE3 nach Preis ab 1.26 EUR bis 1.26 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SI9945BDY-T1-GE3 | Hersteller : Siliconix |
 Transistor 2xN-Channel MOSFET; 60V; 20V; 72mOhm; 5,3A; 3,1W; -55°C ~ 150°C; SI9945BDY TSI9945bdyAnzahl je Verpackung: 25 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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| SI9945BDY-T1-GE3 | Hersteller : Vishay Siliconix |
2N-канальний ПТ, Udss, В = 60, Id = 5,3 A, Ciss, пФ @ Uds, В = 665 @ 15, Qg, нКл = 20 @ 10 В, Rds = 58 мОм @ 4,3 А, 10 В, Ugs(th) = 3 В @ 250 мкА, Р, Вт = 3,1 Вт, Тексп, °C = -55...+150, Тип монт. = smd,... Група товару: Транзистори Корпус: SOICN-8 Од. ви Anzahl je Verpackung: 2500 Stücke |
verfügbar 28 Stücke: |
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| SI9945BDY-T1-GE3 | Hersteller : Vishay Siliconix |
Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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SI9945BDY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 60V 5.3A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.3A Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar |
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SI9945BDY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 60V 5.3A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.3A Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar |