SIA4263DJ-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: P-CHANNEL 20-V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 4.5V
Power Dissipation (Max): 3.29W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 52.2 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1825 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.55 EUR |
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Technische Details SIA4263DJ-T1-GE3 Vishay Siliconix
Description: P-CHANNEL 20-V (D-S) MOSFET POWE, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 12A (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 4.5V, Power Dissipation (Max): 3.29W (Ta), 15.6W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: PowerPAK® SC-70-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 52.2 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 1825 pF @ 10 V.
Weitere Produktangebote SIA4263DJ-T1-GE3 nach Preis ab 0.54 EUR bis 1.56 EUR
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SIA4263DJ-T1-GE3 | Hersteller : Vishay / Siliconix |
MOSFET P-CH 20-V MSFT |
auf Bestellung 23337 Stücke: Lieferzeit 14-28 Tag (e) |
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SIA4263DJ-T1-GE3 | Hersteller : Vishay Siliconix |
Description: P-CHANNEL 20-V (D-S) MOSFET POWE Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 12A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 4.5V Power Dissipation (Max): 3.29W (Ta), 15.6W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 52.2 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1825 pF @ 10 V |
auf Bestellung 6010 Stücke: Lieferzeit 21-28 Tag (e) |
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| SIA4263DJ-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -12A; Idm: -32A Kind of package: reel; tape Drain-source voltage: -20V Drain current: -12A On-state resistance: 51.1mΩ Type of transistor: P-MOSFET Power dissipation: 15.6W Polarisation: unipolar Gate charge: 52.2nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -32A Mounting: SMD Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIA4263DJ-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -12A; Idm: -32A Kind of package: reel; tape Drain-source voltage: -20V Drain current: -12A On-state resistance: 51.1mΩ Type of transistor: P-MOSFET Power dissipation: 15.6W Polarisation: unipolar Gate charge: 52.2nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -32A Mounting: SMD |
Produkt ist nicht verfügbar |