SIA433EDJ-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 7.6A, 4.5V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 8 V
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Technische Details SIA433EDJ-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 20V 12A PPAK SC70-6, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 7.6A, 4.5V, Power Dissipation (Max): 3.5W (Ta), 19W (Tc), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: PowerPAK® SC-70-6, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 8 V.
Weitere Produktangebote SIA433EDJ-T1-GE3 nach Preis ab 0.45 EUR bis 1.78 EUR
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SIA433EDJ-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 12A PPAK SC70-6 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 7.6A, 4.5V Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 8 V |
auf Bestellung 8146 Stücke: Lieferzeit 10-14 Tag (e) |
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SIA433EDJ-T1-GE3 | Vishay Semiconductors |
MOSFETs -20V Vds 12V Vgs PowerPAK SC-70 |
auf Bestellung 3295 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SIA433EDJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 7.6A, 4.5V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 8 V
Description: MOSFET P-CH 20V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 7.6A, 4.5V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 8 V
auf Bestellung 8146 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 17+ | 1.09 EUR |
| 19+ | 0.95 EUR |
| 100+ | 0.66 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.47 EUR |
| SIA433EDJ-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs -20V Vds 12V Vgs PowerPAK SC-70
MOSFETs -20V Vds 12V Vgs PowerPAK SC-70
auf Bestellung 3295 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.78 EUR |
| 10+ | 1.1 EUR |
| 100+ | 0.75 EUR |
| 500+ | 0.6 EUR |
| 1000+ | 0.52 EUR |
| 3000+ | 0.49 EUR |
| 6000+ | 0.45 EUR |