Weitere Produktangebote SIA440DJ-T1-GE3 nach Preis ab 0.22 EUR bis 0.83 EUR
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SIA440DJ-T1-GE3 | Vishay Siliconix |
 Description: MOSFET N-CH 40V 12A PPAK SC70-6Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SC-70-6 Vgs(th) (Max) @ Id: 1.4V @ 250µA Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 9A, 10V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SC-70-6 Packaging: Tape & Reel (TR) Current - Continuous Drain (Id) @ 25°C: 12A (Tc) |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIA440DJ-T1-GE3 | Vishay Semiconductors |
MOSFETs 40V Vds 12V Vgs PowerPAK SC-70 |
auf Bestellung 86277 Stücke: Lieferzeit 10-14 Tag (e) |
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SIA440DJ-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 12A PPAK SC70-6 Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SC-70-6 Vgs(th) (Max) @ Id: 1.4V @ 250µA Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 9A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SC-70-6 Packaging: Cut Tape (CT) |
auf Bestellung 15985 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIA440DJ-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 12A PPAK SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 9A, 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Description: MOSFET N-CH 40V 12A PPAK SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 9A, 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.23 EUR |
| 9000+ | 0.22 EUR |
| SIA440DJ-T1-GE3 |
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Hersteller: Vishay Semiconductors
MOSFETs 40V Vds 12V Vgs PowerPAK SC-70
MOSFETs 40V Vds 12V Vgs PowerPAK SC-70
auf Bestellung 86277 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 0.82 EUR |
| 10+ | 0.51 EUR |
| 100+ | 0.41 EUR |
| 500+ | 0.34 EUR |
| 1000+ | 0.3 EUR |
| 3000+ | 0.22 EUR |
| SIA440DJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 12A PPAK SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 12A PPAK SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6
Packaging: Cut Tape (CT)
auf Bestellung 15985 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 22+ | 0.83 EUR |
| 35+ | 0.51 EUR |
| 100+ | 0.4 EUR |
| 500+ | 0.34 EUR |
| 1000+ | 0.31 EUR |