Weitere Produktangebote SIA440DJ-T1-GE3 nach Preis ab 0.26 EUR bis 0.99 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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SIA440DJ-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 12A PPAK SC70-6Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SC-70-6 Vgs(th) (Max) @ Id: 1.4V @ 250µA Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 9A, 10V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SC-70-6 Packaging: Tape & Reel (TR) Current - Continuous Drain (Id) @ 25°C: 12A (Tc) |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIA440DJ-T1-GE3 | Vishay Semiconductors |
MOSFETs 40V Vds 12V Vgs PowerPAK SC-70 |
auf Bestellung 86277 Stücke: Lieferzeit 10-14 Tag (e) |
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SIA440DJ-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 12A PPAK SC70-6Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SC-70-6 Vgs(th) (Max) @ Id: 1.4V @ 250µA Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 9A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SC-70-6 Packaging: Cut Tape (CT) |
auf Bestellung 15985 Stücke: Lieferzeit 10-14 Tag (e) |
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SIA440DJ-T1-GE3 | VISHAY |
Description: VISHAY - SIA440DJ-T1-GE3 - Leistungs-MOSFET, n-Kanal, 40 V, 12 A, 0.026 ohm, PowerPAK SC-70, OberflächenmontagetariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 12A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: - Verlustleistung: 19W SVHC: No SVHC (04-Feb-2026) Bauform - Transistor: PowerPAK SC-70 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: No usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.026ohm |
auf Bestellung 32366 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SIA440DJ-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 12A PPAK SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 9A, 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Description: MOSFET N-CH 40V 12A PPAK SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 9A, 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.27 EUR |
| 9000+ | 0.26 EUR |
| SIA440DJ-T1-GE3 |
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Hersteller: Vishay Semiconductors
MOSFETs 40V Vds 12V Vgs PowerPAK SC-70
MOSFETs 40V Vds 12V Vgs PowerPAK SC-70
auf Bestellung 86277 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 0.98 EUR |
| 10+ | 0.61 EUR |
| 100+ | 0.49 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.36 EUR |
| 3000+ | 0.26 EUR |
| SIA440DJ-T1-GE3 |
![]() |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 12A PPAK SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 12A PPAK SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6
Packaging: Cut Tape (CT)
auf Bestellung 15985 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 22+ | 0.99 EUR |
| 35+ | 0.61 EUR |
| 100+ | 0.48 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.37 EUR |
| SIA440DJ-T1-GE3 |
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Hersteller: VISHAY
Description: VISHAY - SIA440DJ-T1-GE3 - Leistungs-MOSFET, n-Kanal, 40 V, 12 A, 0.026 ohm, PowerPAK SC-70, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 12A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: -
Verlustleistung: 19W
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: PowerPAK SC-70
Anzahl der Pins: 6Pin(s)
Produktpalette: -
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.026ohm
Description: VISHAY - SIA440DJ-T1-GE3 - Leistungs-MOSFET, n-Kanal, 40 V, 12 A, 0.026 ohm, PowerPAK SC-70, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 12A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: -
Verlustleistung: 19W
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: PowerPAK SC-70
Anzahl der Pins: 6Pin(s)
Produktpalette: -
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.026ohm
auf Bestellung 32366 Stücke:
Lieferzeit 14-21 Tag (e)




