SiA445EDJT-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 20V 12A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 16.7mOhm @ 7A, 4.5V
Power Dissipation (Max): 19W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Single
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 10 V
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.26 EUR |
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Technische Details SiA445EDJT-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 20V 12A PPAK SC70-6, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 16.7mOhm @ 7A, 4.5V, Power Dissipation (Max): 19W (Tc), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: PowerPAK® SC-70-6 Single, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 10 V.
Weitere Produktangebote SiA445EDJT-T1-GE3 nach Preis ab 0.25 EUR bis 0.77 EUR
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SiA445EDJT-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 12A PPAK SC70-6 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 16.7mOhm @ 7A, 4.5V Power Dissipation (Max): 19W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Single Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 10 V |
auf Bestellung 3500 Stücke: Lieferzeit 10-14 Tag (e) |
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SiA445EDJT-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET -20V Vds 12V Vgs Thin PowerPAK SC-70 |
auf Bestellung 105122 Stücke: Lieferzeit 10-14 Tag (e) |
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SIA445EDJT-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 12A 6-Pin PowerPAK SC-70 EP T/R |
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SIA445EDJT-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 12A 6-Pin PowerPAK SC-70 EP T/R |
Produkt ist nicht verfügbar |
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| SIA445EDJT-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 12A 6-Pin PowerPAK SC-70 EP T/R |
Produkt ist nicht verfügbar |
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| SiA445EDJT-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -12A; Idm: -50A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -12A Pulsed drain current: -50A Power dissipation: 19W Gate-source voltage: ±12V On-state resistance: 31mΩ Mounting: SMD Gate charge: 69nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SiA445EDJT-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -12A; Idm: -50A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -12A Pulsed drain current: -50A Power dissipation: 19W Gate-source voltage: ±12V On-state resistance: 31mΩ Mounting: SMD Gate charge: 69nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |