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Technische Details SIA446DJ-T1-GE3 Vishay
Description: MOSFET N-CH 150V 7.7A PPAK SC70, Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 75 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: PowerPAK® SC-70-6, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Power Dissipation (Max): 3.5W (Ta), 19W (Tc), Rds On (Max) @ Id, Vgs: 177mOhm @ 3A, 10V, Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SC-70-6, Packaging: Tape & Reel (TR).
Weitere Produktangebote SIA446DJ-T1-GE3 nach Preis ab 0.36 EUR bis 1.78 EUR
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SIA446DJ-T1-GE3 | Vishay |
 Trans MOSFET N-CH 150V 7.7A 6-Pin PowerPAK SC-70 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SIA446DJ-T1-GE3 | Vishay |
Trans MOSFET N-CH 150V 7.7A 6-Pin PowerPAK SC-70 T/R |
auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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SIA446DJ-T1-GE3 | Vishay |
Trans MOSFET N-CH 150V 7.7A 6-Pin PowerPAK SC-70 T/R |
auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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SIA446DJ-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 150V 7.7A PPAK SC70 Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: PowerPAK® SC-70-6 Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Rds On (Max) @ Id, Vgs: 177mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SC-70-6 Packaging: Tape & Reel (TR) |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIA446DJ-T1-GE3 | Vishay |
Trans MOSFET N-CH 150V 7.7A 6-Pin PowerPAK SC-70 T/R |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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SIA446DJ-T1-GE3 | Vishay |
Trans MOSFET N-CH 150V 7.7A 6-Pin PowerPAK SC-70 T/R |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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SIA446DJ-T1-GE3 | Vishay Semiconductors |
MOSFETs 150V Vds 20V Vgs PowerPAK SC-70 |
auf Bestellung 46406 Stücke: Lieferzeit 10-14 Tag (e) |
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SIA446DJ-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 150V 7.7A PPAK SC70 Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: PowerPAK® SC-70-6 Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Rds On (Max) @ Id, Vgs: 177mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SC-70-6 Packaging: Cut Tape (CT) |
auf Bestellung 8842 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIA446DJ-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 150V 7.7A 6-Pin PowerPAK SC-70 T/R
Trans MOSFET N-CH 150V 7.7A 6-Pin PowerPAK SC-70 T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.4 EUR |
| SIA446DJ-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 150V 7.7A 6-Pin PowerPAK SC-70 T/R
Trans MOSFET N-CH 150V 7.7A 6-Pin PowerPAK SC-70 T/R
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.4 EUR |
| 6000+ | 0.36 EUR |
| SIA446DJ-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 150V 7.7A 6-Pin PowerPAK SC-70 T/R
Trans MOSFET N-CH 150V 7.7A 6-Pin PowerPAK SC-70 T/R
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.42 EUR |
| 6000+ | 0.37 EUR |
| SIA446DJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 7.7A PPAK SC70
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PowerPAK® SC-70-6
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Rds On (Max) @ Id, Vgs: 177mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 150V 7.7A PPAK SC70
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PowerPAK® SC-70-6
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Rds On (Max) @ Id, Vgs: 177mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.44 EUR |
| 6000+ | 0.4 EUR |
| SIA446DJ-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 150V 7.7A 6-Pin PowerPAK SC-70 T/R
Trans MOSFET N-CH 150V 7.7A 6-Pin PowerPAK SC-70 T/R
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6000+ | 0.68 EUR |
| SIA446DJ-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 150V 7.7A 6-Pin PowerPAK SC-70 T/R
Trans MOSFET N-CH 150V 7.7A 6-Pin PowerPAK SC-70 T/R
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6000+ | 0.68 EUR |
| SIA446DJ-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs 150V Vds 20V Vgs PowerPAK SC-70
MOSFETs 150V Vds 20V Vgs PowerPAK SC-70
auf Bestellung 46406 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.71 EUR |
| 10+ | 1.11 EUR |
| 100+ | 0.75 EUR |
| 500+ | 0.6 EUR |
| 1000+ | 0.54 EUR |
| 3000+ | 0.45 EUR |
| 6000+ | 0.44 EUR |
| SIA446DJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 7.7A PPAK SC70
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PowerPAK® SC-70-6
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Rds On (Max) @ Id, Vgs: 177mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 150V 7.7A PPAK SC70
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PowerPAK® SC-70-6
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Rds On (Max) @ Id, Vgs: 177mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6
Packaging: Cut Tape (CT)
auf Bestellung 8842 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.78 EUR |
| 19+ | 1.12 EUR |
| 100+ | 0.73 EUR |
| 500+ | 0.56 EUR |
| 1000+ | 0.51 EUR |