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SIA446DJ-T1-GE3

SIA446DJ-T1-GE3 Vishay Siliconix


sia446dj.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 7.7A PPAK SC70
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 177mOhm @ 3A, 10V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 75 V
auf Bestellung 9000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.41 EUR
6000+0.38 EUR
9000+0.37 EUR
Mindestbestellmenge: 3000
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Technische Details SIA446DJ-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 150V 7.7A PPAK SC70, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc), Rds On (Max) @ Id, Vgs: 177mOhm @ 3A, 10V, Power Dissipation (Max): 3.5W (Ta), 19W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: PowerPAK® SC-70-6, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 75 V.

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SIA446DJ-T1-GE3 SIA446DJ-T1-GE3 Hersteller : Vishay Siliconix sia446dj.pdf Description: MOSFET N-CH 150V 7.7A PPAK SC70
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 177mOhm @ 3A, 10V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 75 V
auf Bestellung 9567 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.69 EUR
17+1.05 EUR
100+0.69 EUR
500+0.53 EUR
1000+0.48 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
SIA446DJ-T1-GE3 SIA446DJ-T1-GE3 Hersteller : Vishay Semiconductors sia446dj-1763958.pdf MOSFET 150V Vds 20V Vgs PowerPAK SC-70
auf Bestellung 2412 Stücke:
Lieferzeit 10-14 Tag (e)
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SIA446DJ-T1-GE3 SIA446DJ-T1-GE3 Hersteller : Vishay sia446dj.pdf Trans MOSFET N-CH 150V 7.7A 6-Pin PowerPAK SC-70 T/R
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
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SIA446DJ-T1-GE3 Hersteller : VISHAY sia446dj.pdf SIA446DJ-T1-GE3 SMD N channel transistors
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