SIA456DJ-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 2.6A PPAK SC70
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 750mA, 4.5V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 100 V
Description: MOSFET N-CH 200V 2.6A PPAK SC70
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 750mA, 4.5V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 100 V
auf Bestellung 22200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.6 EUR |
6000+ | 0.58 EUR |
9000+ | 0.55 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIA456DJ-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 200V 2.6A PPAK SC70, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc), Rds On (Max) @ Id, Vgs: 1.38Ohm @ 750mA, 4.5V, Power Dissipation (Max): 3.5W (Ta), 19W (Tc), Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: PowerPAK® SC-70-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 100 V.
Weitere Produktangebote SIA456DJ-T1-GE3 nach Preis ab 0.64 EUR bis 2.18 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SIA456DJ-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 200V 2.6A PPAK SC70 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Rds On (Max) @ Id, Vgs: 1.38Ohm @ 750mA, 4.5V Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 100 V |
auf Bestellung 23400 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
SIA456DJ-T1-GE3 | Hersteller : Vishay Semiconductors | MOSFET 200V Vds 16V Vgs PowerPAK SC-70 |
auf Bestellung 18000 Stücke: Lieferzeit 266-280 Tag (e) |
|
|||||||||||||||
SIA456DJ-T1-GE3 | Hersteller : Vishay | Trans MOSFET N-CH 200V 2.6A 6-Pin PowerPAK SC-70 T/R |
Produkt ist nicht verfügbar |
||||||||||||||||
SIA456DJ-T1-GE3 | Hersteller : Vishay | Trans MOSFET N-CH 200V 2.6A 6-Pin PowerPAK SC-70 T/R |
Produkt ist nicht verfügbar |
||||||||||||||||
SIA456DJ-T1-GE3 | Hersteller : Vishay | Trans MOSFET N-CH 200V 2.6A 6-Pin PowerPAK SC-70 T/R |
Produkt ist nicht verfügbar |
||||||||||||||||
SIA456DJ-T1-GE3 | Hersteller : Vishay | Trans MOSFET N-CH 200V 2.6A 6-Pin PowerPAK SC-70 T/R |
Produkt ist nicht verfügbar |
||||||||||||||||
SIA456DJ-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 2.6A; Idm: 2A; 12W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 2.6A Pulsed drain current: 2A Power dissipation: 12W Case: PowerPAK® SC70 Gate-source voltage: ±16V On-state resistance: 1.38Ω Mounting: SMD Gate charge: 14.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
SIA456DJ-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 2.6A; Idm: 2A; 12W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 2.6A Pulsed drain current: 2A Power dissipation: 12W Case: PowerPAK® SC70 Gate-source voltage: ±16V On-state resistance: 1.38Ω Mounting: SMD Gate charge: 14.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |