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SIA456DJ-T3-GE3

SIA456DJ-T3-GE3 Vishay / Siliconix


sia456dj-1504775.pdf Hersteller: Vishay / Siliconix
MOSFET 200V Vds 16V Vgs PowerPAK SC-70
auf Bestellung 4996 Stücke:

Lieferzeit 740-744 Tag (e)
Anzahl Preis ohne MwSt
2+1.54 EUR
10+ 1.37 EUR
100+ 1.07 EUR
500+ 0.88 EUR
1000+ 0.7 EUR
2500+ 0.67 EUR
Mindestbestellmenge: 2
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Technische Details SIA456DJ-T3-GE3 Vishay / Siliconix

Description: MOSFET N-CH 200V 1.1A/2.6A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 2.6A (Tc), Rds On (Max) @ Id, Vgs: 1.38Ohm @ 750mA, 4.5V, Power Dissipation (Max): 3.5W (Ta), 19W (Tc), Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: PowerPAK® SC-70-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 100 V.

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SIA456DJ-T3-GE3 SIA456DJ-T3-GE3 Hersteller : Vishay sia456dj.pdf N-Channel 200 V (D-S) MOSFET
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SIA456DJ-T3-GE3 Hersteller : Vishay Siliconix sia456dj.pdf Description: MOSFET N-CH 200V 1.1A/2.6A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 750mA, 4.5V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 100 V
Produkt ist nicht verfügbar