SIA456DJ-T3-GE3 Vishay / Siliconix
auf Bestellung 4996 Stücke:
Lieferzeit 740-744 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.54 EUR |
| 10+ | 1.37 EUR |
| 100+ | 1.07 EUR |
| 500+ | 0.88 EUR |
| 1000+ | 0.70 EUR |
| 2500+ | 0.67 EUR |
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Technische Details SIA456DJ-T3-GE3 Vishay / Siliconix
Description: MOSFET N-CH 200V 1.1A/2.6A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 2.6A (Tc), Rds On (Max) @ Id, Vgs: 1.38Ohm @ 750mA, 4.5V, Power Dissipation (Max): 3.5W (Ta), 19W (Tc), Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: PowerPAK® SC-70-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 100 V.
Weitere Produktangebote SIA456DJ-T3-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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SIA456DJ-T3-GE3 | Hersteller : Vishay |
 N-Channel 200 V (D-S) MOSFET |
Produkt ist nicht verfügbar |
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SIA456DJ-T3-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 200V 1.1A/2.6A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 2.6A (Tc) Rds On (Max) @ Id, Vgs: 1.38Ohm @ 750mA, 4.5V Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 100 V |
Produkt ist nicht verfügbar |