SiA469DJ-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 12A PPAK SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6 Single
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 15.6W (Tc)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.17 EUR |
| 6000+ | 0.16 EUR |
| 9000+ | 0.15 EUR |
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Technische Details SiA469DJ-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 30V 12A PPAK SC70-6, Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® SC-70-6 Single, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 15.6W (Tc), Rds On (Max) @ Id, Vgs: 26.5mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SC-70-6, Packaging: Tape & Reel (TR).
Weitere Produktangebote SiA469DJ-T1-GE3 nach Preis ab 0.24 EUR bis 1.08 EUR
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SiA469DJ-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 12A PPAK SC70-6 Supplier Device Package: PowerPAK® SC-70-6 Single Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 15.6W (Tc) Rds On (Max) @ Id, Vgs: 26.5mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SC-70-6 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active |
auf Bestellung 73228 Stücke: Lieferzeit 10-14 Tag (e) |
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SiA469DJ-T1-GE3 | Vishay Semiconductors |
MOSFETs -30V Vds 20V Vgs PowerPAK SC-70 |
auf Bestellung 100872 Stücke: Lieferzeit 10-14 Tag (e) |
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| SiA469DJ-T1-GE3 | Vishay Siliconix |
P-канальний ПТ, Udss, В = 30, Id = 12, Ciss, пФ @ Uds, В = 1020 @ 15, Qg, нКл = 15, Rds = 26,5 мОм, Ugs(th) = 3 В, Р, Вт = 15,6, Тексп, °C = -55...+150, Тип монт. = smd,... Транзистори Корпус: SC70-6L Од. вим: шт Anzahl je Verpackung: 3000 Stücke |
verfügbar 23 Stücke: |
Im Einkaufswagen Stück im Wert von UAH |
| SiA469DJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 12A PPAK SC70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 15.6W (Tc)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Description: MOSFET P-CH 30V 12A PPAK SC70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 15.6W (Tc)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
auf Bestellung 73228 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 22+ | 0.81 EUR |
| 33+ | 0.55 EUR |
| 100+ | 0.35 EUR |
| 500+ | 0.27 EUR |
| 1000+ | 0.24 EUR |
| SiA469DJ-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs -30V Vds 20V Vgs PowerPAK SC-70
MOSFETs -30V Vds 20V Vgs PowerPAK SC-70
auf Bestellung 100872 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 1.08 EUR |
| 10+ | 0.67 EUR |
| 100+ | 0.43 EUR |
| 500+ | 0.33 EUR |
| 3000+ | 0.32 EUR |
| 6000+ | 0.28 EUR |
| 9000+ | 0.24 EUR |
| SiA469DJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
P-канальний ПТ, Udss, В = 30, Id = 12, Ciss, пФ @ Uds, В = 1020 @ 15, Qg, нКл = 15, Rds = 26,5 мОм, Ugs(th) = 3 В, Р, Вт = 15,6, Тексп, °C = -55...+150, Тип монт. = smd,... Транзистори Корпус: SC70-6L Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
P-канальний ПТ, Udss, В = 30, Id = 12, Ciss, пФ @ Uds, В = 1020 @ 15, Qg, нКл = 15, Rds = 26,5 мОм, Ugs(th) = 3 В, Р, Вт = 15,6, Тексп, °C = -55...+150, Тип монт. = smd,... Транзистори Корпус: SC70-6L Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
verfügbar 23 Stücke:
Im Einkaufswagen
Stück im Wert von UAH