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Technische Details SIA471DJ-T1-GE3 Vishay
Description: VISHAY - SIA471DJ-T1-GE3 - P-CHANNEL 30-V (D-S) MOSFET 42AJ0287, tariffCode: 0, Transistormontage: Surface Mount, euEccn: NLR, Drain-Source-Spannung Vds: 30V, rohsCompliant: YES, Dauer-Drainstrom Id: 30.3A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Gate-Source-Schwellenspannung, max.: 2.5V, Verlustleistung: 19.2W, SVHC: To Be Advised, Bauform - Transistor: PowerPAK SC-70, Anzahl der Pins: 6Pin(s), Produktpalette: TrenchFET Gen IV Series, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: P Channel, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 0.014ohm, directShipCharge: 25.
Weitere Produktangebote SIA471DJ-T1-GE3 nach Preis ab 0.26 EUR bis 1.93 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
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SIA471DJ-T1-GE3 | Vishay |
 Trans MOSFET P-CH 30V 12.9A 6-Pin PowerPAK SC-70 T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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SIA471DJ-T1-GE3 | Vishay |
Trans MOSFET P-CH 30V 12.9A 6-Pin PowerPAK SC-70 T/R |
auf Bestellung 3549 Stücke: Lieferzeit 14-21 Tag (e) |
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SIA471DJ-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 12.9A/30.3A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12.9A (Ta), 30.3A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +16V, -20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 27.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 15 V |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIA471DJ-T1-GE3 | Vishay |
Trans MOSFET P-CH 30V 12.9A 6-Pin PowerPAK SC-70 T/R |
auf Bestellung 3549 Stücke: Lieferzeit 14-21 Tag (e) |
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SIA471DJ-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 12.9A/30.3A PPAK Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 27.8 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +16V, -20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PowerPAK® SC-70-6 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 12.9A (Ta), 30.3A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SC-70-6 Packaging: Cut Tape (CT) |
auf Bestellung 21767 Stücke: Lieferzeit 10-14 Tag (e) |
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SIA471DJ-T1-GE3 | VISHAY |
Description: VISHAY - SIA471DJ-T1-GE3 - P-CHANNEL 30-V (D-S) MOSFET 42AJ0287 tariffCode: 0 Transistormontage: Surface Mount euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 30.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Source-Schwellenspannung, max.: 2.5V Verlustleistung: 19.2W SVHC: To Be Advised Bauform - Transistor: PowerPAK SC-70 Anzahl der Pins: 6Pin(s) Produktpalette: TrenchFET Gen IV Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: P Channel Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.014ohm directShipCharge: 25 |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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SIA471DJ-T1-GE3 | Vishay Semiconductors |
MOSFETs Pch 30V Vds 20V Vgs PowerPAK SC-70-6L |
auf Bestellung 136553 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIA471DJ-T1-GE3 | Vishay Siliconix |
P-канальний ПТ, Udss, В = 30, Id = 250 мкА, Ciss, пФ @ Uds, В = 1170 @ 15, Qg, нКл = 27.8, Rds = 14 мОм, Ugs(th) = 10 В, Р, Вт = 19.2, Тексп, °C = -55...+150,... Транзистори Корпус: SC70-6L Од. вим: шт Anzahl je Verpackung: 2500 Stücke |
verfügbar 3 Stücke: |
Im Einkaufswagen Stück im Wert von UAH |
| SIA471DJ-T1-GE3 |
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Hersteller: Vishay
Trans MOSFET P-CH 30V 12.9A 6-Pin PowerPAK SC-70 T/R
Trans MOSFET P-CH 30V 12.9A 6-Pin PowerPAK SC-70 T/R
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6000+ | 0.33 EUR |
| SIA471DJ-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 30V 12.9A 6-Pin PowerPAK SC-70 T/R
Trans MOSFET P-CH 30V 12.9A 6-Pin PowerPAK SC-70 T/R
auf Bestellung 3549 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 455+ | 0.38 EUR |
| 496+ | 0.35 EUR |
| 501+ | 0.33 EUR |
| 515+ | 0.32 EUR |
| 3000+ | 0.31 EUR |
| SIA471DJ-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 12.9A/30.3A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.9A (Ta), 30.3A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 15 V
Description: MOSFET P-CH 30V 12.9A/30.3A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.9A (Ta), 30.3A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 15 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.39 EUR |
| 6000+ | 0.38 EUR |
| 15000+ | 0.36 EUR |
| SIA471DJ-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 30V 12.9A 6-Pin PowerPAK SC-70 T/R
Trans MOSFET P-CH 30V 12.9A 6-Pin PowerPAK SC-70 T/R
auf Bestellung 3549 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 437+ | 0.4 EUR |
| 451+ | 0.38 EUR |
| 455+ | 0.36 EUR |
| 496+ | 0.32 EUR |
| 501+ | 0.3 EUR |
| 515+ | 0.29 EUR |
| 1000+ | 0.26 EUR |
| SIA471DJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 12.9A/30.3A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 27.8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +16V, -20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SC-70-6
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.9A (Ta), 30.3A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 30V 12.9A/30.3A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 27.8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +16V, -20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SC-70-6
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.9A (Ta), 30.3A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6
Packaging: Cut Tape (CT)
auf Bestellung 21767 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 23+ | 0.92 EUR |
| 30+ | 0.7 EUR |
| 100+ | 0.54 EUR |
| 500+ | 0.46 EUR |
| 1000+ | 0.43 EUR |
| SIA471DJ-T1-GE3 |
|
Hersteller: VISHAY
Description: VISHAY - SIA471DJ-T1-GE3 - P-CHANNEL 30-V (D-S) MOSFET 42AJ0287
tariffCode: 0
Transistormontage: Surface Mount
euEccn: NLR
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 30.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 2.5V
Verlustleistung: 19.2W
SVHC: To Be Advised
Bauform - Transistor: PowerPAK SC-70
Anzahl der Pins: 6Pin(s)
Produktpalette: TrenchFET Gen IV Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: P Channel
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.014ohm
directShipCharge: 25
Description: VISHAY - SIA471DJ-T1-GE3 - P-CHANNEL 30-V (D-S) MOSFET 42AJ0287
tariffCode: 0
Transistormontage: Surface Mount
euEccn: NLR
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 30.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 2.5V
Verlustleistung: 19.2W
SVHC: To Be Advised
Bauform - Transistor: PowerPAK SC-70
Anzahl der Pins: 6Pin(s)
Produktpalette: TrenchFET Gen IV Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: P Channel
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.014ohm
directShipCharge: 25
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 131+ | 1.9 EUR |
| 177+ | 1.32 EUR |
| 195+ | 1.09 EUR |
| 218+ | 0.99 EUR |
| 249+ | 0.87 EUR |
| 500+ | 0.76 EUR |
| 1000+ | 0.68 EUR |
| 2500+ | 0.63 EUR |
| SIA471DJ-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs Pch 30V Vds 20V Vgs PowerPAK SC-70-6L
MOSFETs Pch 30V Vds 20V Vgs PowerPAK SC-70-6L
auf Bestellung 136553 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.93 EUR |
| 10+ | 1.2 EUR |
| 100+ | 0.79 EUR |
| 500+ | 0.61 EUR |
| 1000+ | 0.55 EUR |
| 3000+ | 0.48 EUR |
| SIA471DJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
P-канальний ПТ, Udss, В = 30, Id = 250 мкА, Ciss, пФ @ Uds, В = 1170 @ 15, Qg, нКл = 27.8, Rds = 14 мОм, Ugs(th) = 10 В, Р, Вт = 19.2, Тексп, °C = -55...+150,... Транзистори Корпус: SC70-6L Од. вим: шт
Anzahl je Verpackung: 2500 Stücke
P-канальний ПТ, Udss, В = 30, Id = 250 мкА, Ciss, пФ @ Uds, В = 1170 @ 15, Qg, нКл = 27.8, Rds = 14 мОм, Ugs(th) = 10 В, Р, Вт = 19.2, Тексп, °C = -55...+150,... Транзистори Корпус: SC70-6L Од. вим: шт
Anzahl je Verpackung: 2500 Stücke
verfügbar 3 Stücke: