SIA817EDJ-T1-GE3 Vishay Semiconductors
auf Bestellung 50965 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
56+ | 0.94 EUR |
64+ | 0.81 EUR |
100+ | 0.64 EUR |
500+ | 0.54 EUR |
1000+ | 0.45 EUR |
3000+ | 0.38 EUR |
9000+ | 0.36 EUR |
Produktrezensionen
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Technische Details SIA817EDJ-T1-GE3 Vishay Semiconductors
Description: MOSFET P-CH 30V 4.5A PPAK SC70-6, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6 Dual, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 1.9W (Ta), 6.5W (Tc), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: PowerPAK® SC-70-6 Dual, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V.
Weitere Produktangebote SIA817EDJ-T1-GE3 nach Preis ab 0.44 EUR bis 1.17 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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SIA817EDJ-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 4.5A PPAK SC70-6 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.9W (Ta), 6.5W (Tc) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Dual Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V |
auf Bestellung 1806 Stücke: Lieferzeit 21-28 Tag (e) |
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SIA817EDJ-T1-GE3 | Hersteller : Vishay | Trans MOSFET P-CH 30V 4.5A 6-Pin PowerPAK SC-70 T/R |
Produkt ist nicht verfügbar |
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SIA817EDJ-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET + Schottky; TrenchFET®; unipolar; -30V; 6.5W Type of transistor: P-MOSFET + Schottky Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.5A Pulsed drain current: -15A Power dissipation: 6.5W Gate-source voltage: ±12V On-state resistance: 0.125Ω Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SIA817EDJ-T1-GE3 | Hersteller : Vishay | Trans MOSFET P-CH 30V 4.5A 6-Pin PowerPAK SC-70 T/R |
Produkt ist nicht verfügbar |
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SIA817EDJ-T1-GE3 | Hersteller : Vishay | Trans MOSFET P-CH 30V 4.5A 6-Pin PowerPAK SC-70 T/R |
Produkt ist nicht verfügbar |
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SIA817EDJ-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 4.5A PPAK SC70-6 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SC-70-6 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.9W (Ta), 6.5W (Tc) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Dual Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V |
Produkt ist nicht verfügbar |
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SIA817EDJ-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET + Schottky; TrenchFET®; unipolar; -30V; 6.5W Type of transistor: P-MOSFET + Schottky Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.5A Pulsed drain current: -15A Power dissipation: 6.5W Gate-source voltage: ±12V On-state resistance: 0.125Ω Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |