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SIA817EDJ-T1-GE3

SIA817EDJ-T1-GE3 Vishay Siliconix


sia817edj.pdf
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 4.5A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.9W (Ta), 6.5W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V
auf Bestellung 6000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.24 EUR
6000+0.23 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SIA817EDJ-T1-GE3 Vishay Siliconix

Description: MOSFET P-CH 30V 4.5A PPAK SC70-6, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6 Dual, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 1.9W (Ta), 6.5W (Tc), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: PowerPAK® SC-70-6 Dual, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V.

Weitere Produktangebote SIA817EDJ-T1-GE3 nach Preis ab 0.3 EUR bis 1.36 EUR

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SIA817EDJ-T1-GE3 SIA817EDJ-T1-GE3 Vishay Siliconix sia817edj.pdf Description: MOSFET P-CH 30V 4.5A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.9W (Ta), 6.5W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V
auf Bestellung 7824 Stücke:
Lieferzeit 10-14 Tag (e)
31+0.58 EUR
38+0.46 EUR
100+0.39 EUR
500+0.35 EUR
1000+0.31 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
SIA817EDJ-T1-GE3 SIA817EDJ-T1-GE3 Vishay Semiconductors sia817edj.pdf MOSFETs -30V Vds 12V Vgs PowerPAK SC-70
auf Bestellung 49500 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.36 EUR
10+0.85 EUR
100+0.55 EUR
500+0.42 EUR
1000+0.38 EUR
3000+0.32 EUR
6000+0.3 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SIA817EDJ-T1-GE3 sia817edj.pdf
SIA817EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 4.5A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.9W (Ta), 6.5W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V
auf Bestellung 7824 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.58 EUR
38+0.46 EUR
100+0.39 EUR
500+0.35 EUR
1000+0.31 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
SIA817EDJ-T1-GE3 sia817edj.pdf
SIA817EDJ-T1-GE3
Hersteller: Vishay Semiconductors
MOSFETs -30V Vds 12V Vgs PowerPAK SC-70
auf Bestellung 49500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.36 EUR
10+0.85 EUR
100+0.55 EUR
500+0.42 EUR
1000+0.38 EUR
3000+0.32 EUR
6000+0.3 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH