
SIA907EDJT-T1-GE3 Vishay Siliconix

Description: MOSFET 2P-CH 20V 4.5A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Not For New Designs
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
3000+ | 0.25 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIA907EDJT-T1-GE3 Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.5A SC70-6, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6 Dual, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 7.8W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: PowerPAK® SC-70-6 Dual, Part Status: Not For New Designs.
Weitere Produktangebote SIA907EDJT-T1-GE3 nach Preis ab 0.26 EUR bis 1.02 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
SIA907EDJT-T1-GE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Dual Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 7.8W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Dual Part Status: Not For New Designs |
auf Bestellung 3593 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
SIA907EDJT-T1-GE3 | Hersteller : Vishay Semiconductors |
![]() |
auf Bestellung 110725 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
SIA907EDJT-T1-GE3 | Hersteller : Vishay Siliconix |
![]() |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||||
![]() |
SIA907EDJT-T1-GE3 | Hersteller : Vishay |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||||||
![]() |
SIA907EDJT-T1-GE3 | Hersteller : Vishay |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||||||
![]() |
SIA907EDJT-T1-GE3 | Hersteller : Vishay |
![]() |
Produkt ist nicht verfügbar |