SIA907EDJT-T1-GE3 Vishay Siliconix
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 2.19 EUR |
Produktrezensionen
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Technische Details SIA907EDJT-T1-GE3 Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.5A PPAK8X8, Part Status: Not For New Designs, Supplier Device Package: PowerPAK® SC-70-6 Dual, Vgs(th) (Max) @ Id: 1.4V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), Drain to Source Voltage (Vdss): 20V, Power - Max: 7.8W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: PowerPAK® SC-70-6 Dual, Packaging: Tape & Reel (TR).
Weitere Produktangebote SIA907EDJT-T1-GE3 nach Preis ab 0.96 EUR bis 3.5 EUR
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SIA907EDJT-T1-GE3 | Vishay Semiconductors |
 MOSFETs -20V Vds 12V Vgs Thin PowerPAK SC-70 |
auf Bestellung 110643 Stücke: Lieferzeit 10-14 Tag (e) |
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SIA907EDJT-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2P-CH 20V 4.5A PPAK8X8 Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drain to Source Voltage (Vdss): 20V Power - Max: 7.8W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: PowerPAK® SC-70-6 Dual Packaging: Cut Tape (CT) Part Status: Not For New Designs Supplier Device Package: PowerPAK® SC-70-6 Dual Vgs(th) (Max) @ Id: 1.4V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V |
auf Bestellung 2937 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIA907EDJT-T1-GE3 |
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Hersteller: Vishay Semiconductors
MOSFETs -20V Vds 12V Vgs Thin PowerPAK SC-70
MOSFETs -20V Vds 12V Vgs Thin PowerPAK SC-70
auf Bestellung 110643 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.44 EUR |
| 10+ | 2.2 EUR |
| 100+ | 1.46 EUR |
| 500+ | 1.17 EUR |
| 1000+ | 1.06 EUR |
| 3000+ | 1 EUR |
| 6000+ | 0.96 EUR |
| SIA907EDJT-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.5A PPAK8X8
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 20V
Power - Max: 7.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Packaging: Cut Tape (CT)
Part Status: Not For New Designs
Supplier Device Package: PowerPAK® SC-70-6 Dual
Vgs(th) (Max) @ Id: 1.4V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Description: MOSFET 2P-CH 20V 4.5A PPAK8X8
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 20V
Power - Max: 7.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Packaging: Cut Tape (CT)
Part Status: Not For New Designs
Supplier Device Package: PowerPAK® SC-70-6 Dual
Vgs(th) (Max) @ Id: 1.4V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
auf Bestellung 2937 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.5 EUR |
| 10+ | 2.23 EUR |
| 100+ | 1.5 EUR |
| 500+ | 1.18 EUR |
| 1000+ | 1.08 EUR |