SIA923AEDJ-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET 2P-CH 20V 4.5A PPAK8X8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 10V
Rds On (Max) @ Id, Vgs: 54mOhm @ 3.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.36 EUR |
| 6000+ | 0.33 EUR |
| 9000+ | 0.32 EUR |
| 15000+ | 0.3 EUR |
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Technische Details SIA923AEDJ-T1-GE3 Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.5A PPAK8X8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6 Dual, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 7.8W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4.5A, Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 10V, Rds On (Max) @ Id, Vgs: 54mOhm @ 3.8A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 25nC @ 8V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: PowerPAK® SC-70-6 Dual, Part Status: Active.
Weitere Produktangebote SIA923AEDJ-T1-GE3 nach Preis ab 0.34 EUR bis 1.51 EUR
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SIA923AEDJ-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs -20V .054ohm@-4.5V -4.5A P-CH |
auf Bestellung 6916 Stücke: Lieferzeit 10-14 Tag (e) |
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SIA923AEDJ-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2P-CH 20V 4.5A PPAK8X8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Dual Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 7.8W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 10V Rds On (Max) @ Id, Vgs: 54mOhm @ 3.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 8V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Dual Part Status: Active |
auf Bestellung 21563 Stücke: Lieferzeit 10-14 Tag (e) |
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SIA923AEDJ-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH Si 20V 4.5A 6-Pin PowerPAK SC-70 T/R |
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| SIA923AEDJ-T1-GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -4.5A; 7.8W Type of transistor: P-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.5A Pulsed drain current: -15A Power dissipation: 7.8W Case: PowerPAK® SC70 Gate-source voltage: ±8V On-state resistance: 0.165Ω Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIA923AEDJ-T1-GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -4.5A; 7.8W Type of transistor: P-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.5A Pulsed drain current: -15A Power dissipation: 7.8W Case: PowerPAK® SC70 Gate-source voltage: ±8V On-state resistance: 0.165Ω Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |