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SIA975DJ-T1-GE3

SIA975DJ-T1-GE3 Vishay Siliconix


sia975dj.pdf Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 4.5A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 6V
Rds On (Max) @ Id, Vgs: 41mOhm @ 4.3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
auf Bestellung 84000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.38 EUR
Mindestbestellmenge: 3000
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Produktbewertung abgeben

Technische Details SIA975DJ-T1-GE3 Vishay Siliconix

Description: MOSFET 2P-CH 12V 4.5A SC70-6, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6 Dual, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 7.8W, Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 4.5A, Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 6V, Rds On (Max) @ Id, Vgs: 41mOhm @ 4.3A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 26nC @ 8V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: PowerPAK® SC-70-6 Dual, Part Status: Active.

Weitere Produktangebote SIA975DJ-T1-GE3 nach Preis ab 0.54 EUR bis 1 EUR

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SIA975DJ-T1-GE3 SIA975DJ-T1-GE3 Hersteller : Vishay Siliconix sia975dj.pdf Description: MOSFET 2P-CH 12V 4.5A SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 6V
Rds On (Max) @ Id, Vgs: 41mOhm @ 4.3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
auf Bestellung 87831 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
18+1 EUR
100+ 0.76 EUR
500+ 0.63 EUR
1000+ 0.54 EUR
Mindestbestellmenge: 18
SIA975DJ-T1-GE3 SIA975DJ-T1-GE3 Hersteller : Vishay Semiconductors sia975dj-1764926.pdf MOSFET -12V Vds 8V Vgs PowerPAK SC-70
auf Bestellung 6328 Stücke:
Lieferzeit 14-28 Tag (e)
SIA975DJ-T1-GE3 Hersteller : VISHAY sia975dj.pdf SIA975DJ-T1-GE3 SMD P channel transistors
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