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SIB456DK-T1-GE3

SIB456DK-T1-GE3 Vishay Siliconix

sib456dk.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 6.3A PPAK SC75
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-75-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 1.9A, 10V
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SC-75-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 50 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.26 EUR
6000+0.25 EUR
9000+0.24 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SIB456DK-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 100V 6.3A PPAK SC75, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-75-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc), Rds On (Max) @ Id, Vgs: 185mOhm @ 1.9A, 10V, Power Dissipation (Max): 2.4W (Ta), 13W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® SC-75-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 50 V.

Weitere Produktangebote SIB456DK-T1-GE3 nach Preis ab 0.27 EUR bis 0.94 EUR

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SIB456DK-T1-GE3 SIB456DK-T1-GE3 Hersteller : Vishay Siliconix sib456dk.pdf Description: MOSFET N-CH 100V 6.3A PPAK SC75
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-75-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 1.9A, 10V
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SC-75-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 50 V
auf Bestellung 14074 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.88 EUR
27+0.66 EUR
100+0.45 EUR
500+0.36 EUR
1000+0.31 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
SIB456DK-T1-GE3 SIB456DK-T1-GE3 Hersteller : Vishay Semiconductors sib456dk.pdf MOSFETs 100V Vds 20V Vgs PowerPAK SC-75
auf Bestellung 16523 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.94 EUR
10+0.70 EUR
100+0.48 EUR
500+0.39 EUR
1000+0.33 EUR
3000+0.28 EUR
6000+0.27 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SIB456DK-T1-GE3 Hersteller : Vishay sib456dk.pdf Trans MOSFET N-CH 100V 6.3A 6-Pin PowerPAK SC-75 T/R
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SIB456DK-T1-GE3 Hersteller : VISHAY sib456dk.pdf SIB456DK-T1-GE3 SMD N channel transistors
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