SIB457EDK-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 9A PPAK SC75-6
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Supplier Device Package: PowerPAK® SC-75-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-75-6
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.29 EUR |
| 6000+ | 0.28 EUR |
| 9000+ | 0.27 EUR |
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Technische Details SIB457EDK-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 20V 9A PPAK SC75-6, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 8 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, Supplier Device Package: PowerPAK® SC-75-6, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 2.4W (Ta), 13W (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SC-75-6, Packaging: Tape & Reel (TR).
Weitere Produktangebote SIB457EDK-T1-GE3 nach Preis ab 0.31 EUR bis 1.41 EUR
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SIB457EDK-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 9A PPAK SC75-6 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-75-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 4.5V Power Dissipation (Max): 2.4W (Ta), 13W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerPAK® SC-75-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 8 V |
auf Bestellung 13073 Stücke: Lieferzeit 10-14 Tag (e) |
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SIB457EDK-T1-GE3 | Vishay Semiconductors |
MOSFETs -20V Vds 8V Vgs PowerPAK SC-75 |
auf Bestellung 78574 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SIB457EDK-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 9A PPAK SC75-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-75-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 4.5V
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-75-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 8 V
Description: MOSFET P-CH 20V 9A PPAK SC75-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-75-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 4.5V
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-75-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 8 V
auf Bestellung 13073 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 1.06 EUR |
| 22+ | 0.81 EUR |
| 100+ | 0.55 EUR |
| 500+ | 0.42 EUR |
| 1000+ | 0.37 EUR |
| SIB457EDK-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs -20V Vds 8V Vgs PowerPAK SC-75
MOSFETs -20V Vds 8V Vgs PowerPAK SC-75
auf Bestellung 78574 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 1.41 EUR |
| 10+ | 0.87 EUR |
| 100+ | 0.57 EUR |
| 500+ | 0.44 EUR |
| 1000+ | 0.39 EUR |
| 3000+ | 0.34 EUR |
| 6000+ | 0.31 EUR |