
SIB457EDK-T1-GE3 Vishay Siliconix

Description: MOSFET P-CH 20V 9A PPAK SC75-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-75-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 4.5V
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-75-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 8 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
3000+ | 0.29 EUR |
6000+ | 0.28 EUR |
9000+ | 0.27 EUR |
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Technische Details SIB457EDK-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 20V 9A PPAK SC75-6, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-75-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 4.5V, Power Dissipation (Max): 2.4W (Ta), 13W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: PowerPAK® SC-75-6, Drive Voltage (Max Rds On, Min Rds On): 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 8 V.
Weitere Produktangebote SIB457EDK-T1-GE3 nach Preis ab 0.29 EUR bis 1.06 EUR
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SIB457EDK-T1-GE3 | Hersteller : Vishay Semiconductors |
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auf Bestellung 92417 Stücke: Lieferzeit 10-14 Tag (e) |
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SIB457EDK-T1-GE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-75-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 4.5V Power Dissipation (Max): 2.4W (Ta), 13W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerPAK® SC-75-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 8 V |
auf Bestellung 13073 Stücke: Lieferzeit 10-14 Tag (e) |
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SIB457EDK-T1-GE3 | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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SIB457EDK-T1-GE3 | Hersteller : VISHAY |
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Produkt ist nicht verfügbar |