SIB912DK-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET 2N-CH 20V 1.5A PPAK8X8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-75-6L Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 10V
Rds On (Max) @ Id, Vgs: 216mOhm @ 1.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-75-6L Dual
auf Bestellung 51000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.23 EUR |
| 6000+ | 0.22 EUR |
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Technische Details SIB912DK-T1-GE3 Vishay Siliconix
Description: VISHAY - SIB912DK-T1-GE3 - Dual-MOSFET, n-Kanal, 20 V, 20 V, 1.5 A, 1.5 A, 0.18 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 1.5A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: 20V, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 1.5A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.18ohm, Verlustleistung, p-Kanal: 3.1W, Drain-Source-Spannung Vds, n-Kanal: 20V, euEccn: NLR, Bauform - Transistor: PowerPAK SC-75, Anzahl der Pins: 6Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.18ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 3.1W, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (07-Nov-2024).
Weitere Produktangebote SIB912DK-T1-GE3 nach Preis ab 0.23 EUR bis 1.25 EUR
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SIB912DK-T1-GE3 | Hersteller : Vishay / Siliconix |
MOSFETs 20V Vds 8V Vgs PowerPAK SC-75 |
auf Bestellung 141 Stücke: Lieferzeit 10-14 Tag (e) |
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SIB912DK-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 20V 1.5A PPAK8X8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-75-6L Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 10V Rds On (Max) @ Id, Vgs: 216mOhm @ 1.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3nC @ 8V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerPAK® SC-75-6L Dual |
auf Bestellung 53107 Stücke: Lieferzeit 10-14 Tag (e) |
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SIB912DK-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SIB912DK-T1-GE3 - Dual-MOSFET, n-Kanal, 20 V, 20 V, 1.5 A, 1.5 A, 0.18 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 1.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 20V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 1.5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.18ohm Verlustleistung, p-Kanal: 3.1W Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: PowerPAK SC-75 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.18ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 3.1W Betriebstemperatur, max.: 150°C SVHC: No SVHC (07-Nov-2024) |
auf Bestellung 872 Stücke: Lieferzeit 14-21 Tag (e) |
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SIB912DK-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 20V 1.5A 6-Pin PowerPAK SC-75 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIB912DK-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; Idm: 5A; 2W Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 2W Case: PowerPAK® SC75 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 20V Drain current: 1.5A On-state resistance: 216mΩ Gate charge: 3nC Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: 5A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIB912DK-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; Idm: 5A; 2W Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 2W Case: PowerPAK® SC75 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 20V Drain current: 1.5A On-state resistance: 216mΩ Gate charge: 3nC Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: 5A |
Produkt ist nicht verfügbar |