SIB912DK-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 1.5A PPAK8X8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-75-6L Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 10V
Rds On (Max) @ Id, Vgs: 216mOhm @ 1.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-75-6L Dual
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Technische Details SIB912DK-T1-GE3 Vishay Siliconix
Description: MOSFET 2N-CH 20V 1.5A PPAK8X8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-75-6L Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 1.5A, Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 10V, Rds On (Max) @ Id, Vgs: 216mOhm @ 1.8A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 3nC @ 8V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: PowerPAK® SC-75-6L Dual.
Weitere Produktangebote SIB912DK-T1-GE3 nach Preis ab 0.25 EUR bis 1.25 EUR
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SIB912DK-T1-GE3 | Vishay / Siliconix |
MOSFETs 20V Vds 8V Vgs PowerPAK SC-75 |
auf Bestellung 111 Stücke: Lieferzeit 10-14 Tag (e) |
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SIB912DK-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 20V 1.5A PPAK8X8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-75-6L Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 10V Rds On (Max) @ Id, Vgs: 216mOhm @ 1.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3nC @ 8V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerPAK® SC-75-6L Dual |
auf Bestellung 53107 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIB912DK-T1-GE3 |
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Hersteller: Vishay / Siliconix
MOSFETs 20V Vds 8V Vgs PowerPAK SC-75
MOSFETs 20V Vds 8V Vgs PowerPAK SC-75
auf Bestellung 111 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.15 EUR |
| 10+ | 0.72 EUR |
| 100+ | 0.46 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.32 EUR |
| 3000+ | 0.27 EUR |
| 6000+ | 0.25 EUR |
| SIB912DK-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 1.5A PPAK8X8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-75-6L Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 10V
Rds On (Max) @ Id, Vgs: 216mOhm @ 1.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-75-6L Dual
Description: MOSFET 2N-CH 20V 1.5A PPAK8X8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-75-6L Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 10V
Rds On (Max) @ Id, Vgs: 216mOhm @ 1.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-75-6L Dual
auf Bestellung 53107 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 15+ | 1.25 EUR |
| 23+ | 0.77 EUR |
| 100+ | 0.5 EUR |
| 500+ | 0.38 EUR |
| 1000+ | 0.34 EUR |