SICBG040N120H-TP

SICBG040N120H-TP MCC (Micro Commercial Components)


SICBG040N120H(TO-263-7L(A)).pdf Hersteller: MCC (Micro Commercial Components)
Description: SIC N-CHANNEL MOSFET,D2-PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 20V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40mA
Supplier Device Package: TO-263-7LA
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 229 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3619 pF @ 800 V
auf Bestellung 800 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+14.53 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details SICBG040N120H-TP MCC (Micro Commercial Components)

Description: SIC N-CHANNEL MOSFET,D2-PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 20V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4V @ 40mA, Supplier Device Package: TO-263-7LA, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 229 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 3619 pF @ 800 V.

Weitere Produktangebote SICBG040N120H-TP

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SICBG040N120H-TP SICBG040N120H-TP Hersteller : MCC (Micro Commercial Components) SICBG040N120H(TO-263-7L(A)).pdf Description: SIC N-CHANNEL MOSFET,D2-PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 20V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40mA
Supplier Device Package: TO-263-7LA
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 229 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3619 pF @ 800 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH