SICBG160N120A-TP Micro Commercial Co

Description: SCHOTTKY DIODES, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 140mOhm @ 9A, 20V, Power Dissipation (Max): 116W (Tc), Vgs(th) (Max) @ Id: 3V @ 2.5mA, Supplier Device Package: TO-263-7, Drive Voltage (Max Rds On, Min Rds On): 16V, 20V, Vgs (Max): +22V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 1000 V.