SICW025N120H4-BP Micro Commercial Components (MCC)
auf Bestellung 360 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 24.94 EUR |
| 10+ | 21.96 EUR |
| 25+ | 21.95 EUR |
| 100+ | 19.82 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SICW025N120H4-BP Micro Commercial Components (MCC)
Description: SIC MOSFET,TO-247-4, Packaging: Bulk, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 86A (Tc), Power Dissipation (Max): 375W (Tc), Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +20V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 4909 pF @ 800 V, Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 20V, Vgs(th) (Max) @ Id: 4.5V @ 50mA.
Weitere Produktangebote SICW025N120H4-BP nach Preis ab 19.91 EUR bis 26.44 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SICW025N120H4-BP | Hersteller : MCC (Micro Commercial Components) |
 Description: SIC MOSFET,TO-247-4Packaging: Bulk Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 86A (Tc) Power Dissipation (Max): 375W (Tc) Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 4909 pF @ 800 V Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 4.5V @ 50mA |
auf Bestellung 350 Stücke: Lieferzeit 10-14 Tag (e) |
|