SICW025N120H4-BP MCC (Micro Commercial Components)
Hersteller: MCC (Micro Commercial Components)Description: SIC MOSFET,TO-247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Power Dissipation (Max): 375W (Tc)
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 4909 pF @ 800 V
Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 4.5V @ 50mA
auf Bestellung 350 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 25.94 EUR |
| 10+ | 19.54 EUR |
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Technische Details SICW025N120H4-BP MCC (Micro Commercial Components)
Description: SIC MOSFET,TO-247-4, Packaging: Bulk, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 86A (Tc), Power Dissipation (Max): 375W (Tc), Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +20V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 4909 pF @ 800 V, Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 20V, Vgs(th) (Max) @ Id: 4.5V @ 50mA.
Weitere Produktangebote SICW025N120H4-BP nach Preis ab 19.04 EUR bis 26.22 EUR
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SICW025N120H4-BP | Hersteller : Micro Commercial Components (MCC) |
SiC MOSFETs SiC MOSFET,TO-247-4 |
auf Bestellung 360 Stücke: Lieferzeit 10-14 Tag (e) |
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