SICW040N120H-BP Micro Commercial Components (MCC)
auf Bestellung 340 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 18.09 EUR |
| 10+ | 14.73 EUR |
| 100+ | 12.27 EUR |
| 500+ | 10.95 EUR |
| 1000+ | 10.23 EUR |
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Technische Details SICW040N120H-BP Micro Commercial Components (MCC)
Description: SIC MOSFET,TO-247AB, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 62A (Tc), Power Dissipation (Max): 326W (Tc), Supplier Device Package: TO-247AB, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 229 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 3619 pF @ 800 V, Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 20V, Vgs(th) (Max) @ Id: 4.5V @ 40mA.
Weitere Produktangebote SICW040N120H-BP nach Preis ab 13.9 EUR bis 18.64 EUR
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SICW040N120H-BP | Hersteller : MCC (Micro Commercial Components) |
 Description: SIC MOSFET,TO-247ABPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Power Dissipation (Max): 326W (Tc) Supplier Device Package: TO-247AB Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 229 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 3619 pF @ 800 V Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 20V Vgs(th) (Max) @ Id: 4.5V @ 40mA |
auf Bestellung 205 Stücke: Lieferzeit 10-14 Tag (e) |
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