SICW040N120H-BP

SICW040N120H-BP Micro Commercial Components (MCC)


SICW040N120H_TO_247AB_-3478434.pdf Hersteller: Micro Commercial Components (MCC)
SiC MOSFETs SiC MOSFET,TO-247AB
auf Bestellung 340 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+17.99 EUR
10+15.42 EUR
100+13.27 EUR
1800+11.26 EUR
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Technische Details SICW040N120H-BP Micro Commercial Components (MCC)

Description: SIC MOSFET,TO-247AB, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 62A (Tc), Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 20V, Power Dissipation (Max): 326W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 40mA, Supplier Device Package: TO-247AB, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 229 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 3619 pF @ 800 V.

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SICW040N120H-BP SICW040N120H-BP Hersteller : MCC (Micro Commercial Components) SICW040N120H(TO-247AB).pdf Description: SIC MOSFET,TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 20V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 40mA
Supplier Device Package: TO-247AB
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 229 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3619 pF @ 800 V
auf Bestellung 205 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.64 EUR
10+13.9 EUR
Im Einkaufswagen  Stück im Wert von  UAH