SICW040N120H4-BP MCC (Micro Commercial Components)
Hersteller: MCC (Micro Commercial Components)Description: SIC MOSFET,TO-247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 20V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 40mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 229 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3619 pF @ 800 V
auf Bestellung 285 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 18.2 EUR |
| 10+ | 12.66 EUR |
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Technische Details SICW040N120H4-BP MCC (Micro Commercial Components)
Description: SIC MOSFET,TO-247-4, Packaging: Bulk, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 62A (Tc), Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 20V, Power Dissipation (Max): 326W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 40mA, Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +20V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 229 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 3619 pF @ 800 V.
Weitere Produktangebote SICW040N120H4-BP nach Preis ab 10.63 EUR bis 18.27 EUR
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SICW040N120H4-BP | Hersteller : Micro Commercial Components (MCC) |
SiC MOSFETs SiC MOSFET,TO-247-4 |
auf Bestellung 360 Stücke: Lieferzeit 10-14 Tag (e) |
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