SICW040N120H4-BP Micro Commercial Components (MCC)
auf Bestellung 360 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 18.16 EUR |
| 10+ | 15.58 EUR |
| 100+ | 13.59 EUR |
| 1800+ | 11.55 EUR |
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Technische Details SICW040N120H4-BP Micro Commercial Components (MCC)
Description: SIC MOSFET,TO-247-4, Packaging: Bulk, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 62A (Tc), Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 20V, Power Dissipation (Max): 326W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 40mA, Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +20V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 229 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 3619 pF @ 800 V.
Weitere Produktangebote SICW040N120H4-BP nach Preis ab 14.04 EUR bis 18.8 EUR
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SICW040N120H4-BP | Hersteller : MCC (Micro Commercial Components) |
 Description: SIC MOSFET,TO-247-4Packaging: Bulk Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 20V Power Dissipation (Max): 326W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 40mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 229 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 3619 pF @ 800 V |
auf Bestellung 285 Stücke: Lieferzeit 10-14 Tag (e) |
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