SICW050N065H-BP

SICW050N065H-BP Micro Commercial Components (MCC)


SICW050N065H_TO_247AB_-3478552.pdf Hersteller: Micro Commercial Components (MCC)
SiC MOSFETs SiC MOSFET,TO-247AB
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Lieferzeit 10-14 Tag (e)
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10+10.86 EUR
100+9.05 EUR
500+7.99 EUR
1000+7.76 EUR
1800+6.85 EUR
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Technische Details SICW050N065H-BP Micro Commercial Components (MCC)

Description: SIC MOSFET,TO-247AB, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 20A, 20V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 20mA, Supplier Device Package: TO-247AB, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 400 V.

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SICW050N065H-BP SICW050N065H-BP Hersteller : Micro Commercial Co Description: SIC MOSFET,TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 20A, 20V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 20mA
Supplier Device Package: TO-247AB
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 400 V
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