SICW050N065H-BP Micro Commercial Components (MCC)
auf Bestellung 360 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 12.78 EUR |
| 10+ | 10.86 EUR |
| 100+ | 9.05 EUR |
| 500+ | 7.99 EUR |
| 1000+ | 7.76 EUR |
| 1800+ | 6.85 EUR |
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Technische Details SICW050N065H-BP Micro Commercial Components (MCC)
Description: SIC MOSFET,TO-247AB, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 20A, 20V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 20mA, Supplier Device Package: TO-247AB, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 400 V.
Weitere Produktangebote SICW050N065H-BP
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SICW050N065H-BP | Hersteller : Micro Commercial Co |
Description: SIC MOSFET,TO-247AB Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 20A, 20V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 20mA Supplier Device Package: TO-247AB Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 400 V |
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