SICW050N065H4-BP Micro Commercial Components (MCC)
auf Bestellung 355 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 12.81 EUR |
10+ | 10.98 EUR |
100+ | 9.15 EUR |
250+ | 8.78 EUR |
500+ | 8.08 EUR |
1000+ | 7.25 EUR |
1800+ | 6.93 EUR |
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Technische Details SICW050N065H4-BP Micro Commercial Components (MCC)
Description: SIC MOSFET,TO-247-4, Packaging: Bulk, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 20A, 20V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 20mA, Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +20V, -5V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 400 V.
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Foto | Bezeichnung | Hersteller | Beschreibung |
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SICW050N065H4-BP | Hersteller : Micro Commercial Components |
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SICW050N065H4-BP | Hersteller : Micro Commercial Co |
![]() Packaging: Bulk Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 20A, 20V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 20mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 400 V |
Produkt ist nicht verfügbar |