SICW080N120Y-BP

SICW080N120Y-BP Micro Commercial Components (MCC)


SICW080N120Y_TO_247_-3051999.pdf Hersteller: Micro Commercial Components (MCC)
SiC MOSFETs
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Lieferzeit 10-14 Tag (e)
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1+29.99 EUR
10+26.42 EUR
25+25.71 EUR
50+24.27 EUR
100+22.84 EUR
250+22.12 EUR
500+20.70 EUR
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Technische Details SICW080N120Y-BP Micro Commercial Components (MCC)

Description: MOSFET N-CH 1200V 38A TO247-3, Packaging: Tape & Reel (TR), Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 38A, Rds On (Max) @ Id, Vgs: 85mOhm @ 20A, 18V, Power Dissipation (Max): 220W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 5mA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 1000 V.

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SICW080N120Y-BP SICW080N120Y-BP Hersteller : MCC (Micro Commercial Components) SICW080N120Y(TO-247).pdf Description: MOSFET N-CH 1200V 38A TO247-3
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A
Rds On (Max) @ Id, Vgs: 85mOhm @ 20A, 18V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 1000 V
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