SICW080N120Y-BP Micro Commercial Components (MCC)
auf Bestellung 1751 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 29.99 EUR |
| 10+ | 26.42 EUR |
| 25+ | 25.71 EUR |
| 50+ | 24.27 EUR |
| 100+ | 22.84 EUR |
| 250+ | 22.12 EUR |
| 500+ | 20.7 EUR |
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Technische Details SICW080N120Y-BP Micro Commercial Components (MCC)
Description: MOSFET N-CH 1200V 38A TO247-3, Packaging: Tape & Reel (TR), Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 38A, Rds On (Max) @ Id, Vgs: 85mOhm @ 20A, 18V, Power Dissipation (Max): 220W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 5mA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 1000 V.
Weitere Produktangebote SICW080N120Y-BP
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SICW080N120Y-BP | Hersteller : MCC (Micro Commercial Components) |
 Description: MOSFET N-CH 1200V 38A TO247-3Packaging: Tape & Reel (TR) Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A Rds On (Max) @ Id, Vgs: 85mOhm @ 20A, 18V Power Dissipation (Max): 220W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 5mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 1000 V |
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