SICW100N065H-BP Micro Commercial Components (MCC)
auf Bestellung 347 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 10.05 EUR |
| 10+ | 8.45 EUR |
| 100+ | 6.85 EUR |
| 250+ | 6.46 EUR |
| 500+ | 6.07 EUR |
| 1000+ | 5.19 EUR |
| 1800+ | 4.89 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SICW100N065H-BP Micro Commercial Components (MCC)
Description: SIC MOSFET,TO-247AB, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Rds On (Max) @ Id, Vgs: 130mOhm @ 12A, 20V, Power Dissipation (Max): 166W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 10mA, Supplier Device Package: TO-247AB, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 400 V.
Weitere Produktangebote SICW100N065H-BP
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
SICW100N065H-BP | Hersteller : Micro Commercial Co |
Description: SIC MOSFET,TO-247AB Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 12A, 20V Power Dissipation (Max): 166W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 10mA Supplier Device Package: TO-247AB Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 400 V |
Produkt ist nicht verfügbar |