SICW100N065H4-BP Micro Commercial Components (MCC)
auf Bestellung 360 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 10.14 EUR |
| 10+ | 8.54 EUR |
| 100+ | 6.88 EUR |
| 250+ | 6.51 EUR |
| 500+ | 6.12 EUR |
| 1000+ | 5.24 EUR |
| 1800+ | 4.95 EUR |
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Technische Details SICW100N065H4-BP Micro Commercial Components (MCC)
Description: SIC MOSFET,TO-247-4, Packaging: Bulk, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Rds On (Max) @ Id, Vgs: 130mOhm @ 12A, 20V, Power Dissipation (Max): 166W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 10mA, Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +20V, -5V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 400 V.
Weitere Produktangebote SICW100N065H4-BP
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SICW100N065H4-BP | Hersteller : Micro Commercial Co |
 Description: SIC MOSFET,TO-247-4Packaging: Bulk Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 12A, 20V Power Dissipation (Max): 166W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 10mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 400 V |
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