SICW100N065H4-BP Micro Commercial Co
Hersteller: Micro Commercial Co
Description: SIC MOSFET,TO-247-4
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 20 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +20V, -5V
Drive Voltage (Max Rds On, Min Rds On): 20V
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 4.5V @ 10mA
Power Dissipation (Max): 166W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12A, 20V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Bulk
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Technische Details SICW100N065H4-BP Micro Commercial Co
Description: SIC MOSFET,TO-247-4, Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 20 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +20V, -5V, Drive Voltage (Max Rds On, Min Rds On): 20V, Supplier Device Package: TO-247-4, Vgs(th) (Max) @ Id: 4.5V @ 10mA, Power Dissipation (Max): 166W (Tc), Rds On (Max) @ Id, Vgs: 130mOhm @ 12A, 20V, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Bulk.
Weitere Produktangebote SICW100N065H4-BP
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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SICW100N065H4-BP | Micro Commercial Components (MCC) |
SiC MOSFETs SiC MOSFET,TO-247-4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SICW100N065H4-BP |
|
Hersteller: Micro Commercial Components (MCC)
SiC MOSFETs SiC MOSFET,TO-247-4
SiC MOSFETs SiC MOSFET,TO-247-4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH