SIDC02D60C6X1SA4 Infineon Technologies
Hersteller: Infineon Technologies
Description: DIODE GP 600V 6A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 6A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
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Technische Details SIDC02D60C6X1SA4 Infineon Technologies
Description: DIODE GP 600V 6A WAFER, Current - Reverse Leakage @ Vr: 27 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 6 A, Voltage - DC Reverse (Vr) (Max): 600 V, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: Sawn on foil, Current - Average Rectified (Io): 6A, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: Die, Packaging: Bulk.