SIDC02D60F6X1SA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: DIODE GP 600V 3A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 3A
Technology: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produktrezensionen
Produktbewertung abgeben
Technische Details SIDC02D60F6X1SA1 Infineon Technologies
Description: DIODE GP 600V 3A WAFER, Current - Reverse Leakage @ Vr: 27 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A, Voltage - DC Reverse (Vr) (Max): 600 V, Operating Temperature - Junction: -40°C ~ 150°C, Supplier Device Package: Sawn on foil, Current - Average Rectified (Io): 3A, Technology: Standard, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: Die, Packaging: Bulk.