SIDC03D120H6X1SA3 Infineon Technologies
Hersteller: Infineon Technologies
Description: DIODE GP 1.2KV 3A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 3A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
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Technische Details SIDC03D120H6X1SA3 Infineon Technologies
Description: DIODE GP 1.2KV 3A WAFER, Current - Reverse Leakage @ Vr: 27 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: Sawn on foil, Current - Average Rectified (Io): 3A, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: Die, Packaging: Bulk.