SIDC06D60C6 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: DIODE GP 600V 20A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 20 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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Technische Details SIDC06D60C6 Infineon Technologies
Description: DIODE GP 600V 20A WAFER, Packaging: Bulk, Package / Case: Die, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 20A, Supplier Device Package: Sawn on foil, Operating Temperature - Junction: -40°C ~ 175°C, Part Status: Discontinued at Digi-Key, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 20 A, Current - Reverse Leakage @ Vr: 27 µA @ 600 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| SIDC06D60C6 | Hersteller : Infineon Technologies |
Diodes - General Purpose, Power, Switching DIODEN-CHIPS |
Produkt ist nicht verfügbar |