SIDC08D60C8X1SA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 600V 30A DIE
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Die
Current - Average Rectified (Io): 30A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
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Technische Details SIDC08D60C8X1SA1 Infineon Technologies
Description: DIODE GEN PURP 600V 30A DIE, Current - Reverse Leakage @ Vr: 27 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A, Voltage - DC Reverse (Vr) (Max): 600 V, Part Status: Active, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: Die, Current - Average Rectified (Io): 30A, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: Die, Packaging: Bulk.