SIDC30D120H8X1SA4 Infineon Technologies

Description: DIODE GP 1.2KV 50A WAFER, Current - Reverse Leakage @ Vr: 27 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 50 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Part Status: Active, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: Sawn on foil, Current - Average Rectified (Io): 50A, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: Die, Packaging: Bulk.