SIDC42D170E6X1SA2 Infineon Technologies
Hersteller: Infineon Technologies
Description: DIODE GP 1.7KV 50A WAFER
Package / Case: Die
Packaging: Bulk
Current - Reverse Leakage @ Vr: 27 µA @ 1700 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 1700 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 50A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
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Technische Details SIDC42D170E6X1SA2 Infineon Technologies
Description: DIODE GP 1.7KV 50A WAFER, Package / Case: Die, Packaging: Bulk, Current - Reverse Leakage @ Vr: 27 µA @ 1700 V, Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 50 A, Voltage - DC Reverse (Vr) (Max): 1700 V, Part Status: Discontinued at Digi-Key, Operating Temperature - Junction: -40°C ~ 150°C, Supplier Device Package: Sawn on foil, Current - Average Rectified (Io): 50A, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount.