SIDR610EP-T1-RE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: N-CHANNEL 200 V (D-S) 175C MOSFE
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 39.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
| Anzahl | Preis |
|---|---|
| 3000+ | 2.56 EUR |
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Technische Details SIDR610EP-T1-RE3 Vishay Siliconix
Description: N-CHANNEL 200 V (D-S) 175C MOSFE, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® SO-8DC, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 7.5W (Ta), 150W (Tc), Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 39.6A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount.
Weitere Produktangebote SIDR610EP-T1-RE3 nach Preis ab 2.58 EUR bis 7.62 EUR
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SIDR610EP-T1-RE3 | Vishay Siliconix |
Description: N-CHANNEL 200 V (D-S) 175C MOSFE Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8DC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 7.5W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 39.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
auf Bestellung 5992 Stücke: Lieferzeit 10-14 Tag (e) |
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SIDR610EP-T1-RE3 | Vishay |
MOSFETs SOT669 200V 39.6A N-CH MOSFET |
auf Bestellung 5425 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SIDR610EP-T1-RE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 200 V (D-S) 175C MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 39.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Description: N-CHANNEL 200 V (D-S) 175C MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 39.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 5992 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 7.15 EUR |
| 10+ | 4.73 EUR |
| 100+ | 3.36 EUR |
| 500+ | 2.77 EUR |
| 1000+ | 2.58 EUR |
| SIDR610EP-T1-RE3 |
|
Hersteller: Vishay
MOSFETs SOT669 200V 39.6A N-CH MOSFET
MOSFETs SOT669 200V 39.6A N-CH MOSFET
auf Bestellung 5425 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 7.62 EUR |
| 10+ | 5.03 EUR |
| 100+ | 3.57 EUR |
| 500+ | 3.12 EUR |
| 3000+ | 2.92 EUR |