SIDR622DP-T1-RE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: N-CHANNEL 150-V (D-S) MOSFET
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1516 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 56.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
| Anzahl | Preis |
|---|---|
| 3000+ | 1.54 EUR |
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Technische Details SIDR622DP-T1-RE3 Vishay Siliconix
Description: N-CHANNEL 150-V (D-S) MOSFET, Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1516 pF @ 75 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® SO-8DC, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 6.25W (Ta), 125W (Tc), Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 56.7A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ).
Weitere Produktangebote SIDR622DP-T1-RE3 nach Preis ab 1.87 EUR bis 5.32 EUR
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SIDR622DP-T1-RE3 | Vishay Siliconix |
Description: N-CHANNEL 150-V (D-S) MOSFET Input Capacitance (Ciss) (Max) @ Vds: 1516 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8DC Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 56.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
auf Bestellung 5869 Stücke: Lieferzeit 10-14 Tag (e) |
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SIDR622DP-T1-RE3 | Vishay / Siliconix |
MOSFETs SOT669 150V 56.7A N-CH MOSFET |
auf Bestellung 303 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SIDR622DP-T1-RE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 150-V (D-S) MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1516 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 56.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Description: N-CHANNEL 150-V (D-S) MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1516 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 56.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 5869 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.91 EUR |
| 10+ | 3.2 EUR |
| 100+ | 2.22 EUR |
| 500+ | 1.89 EUR |
| SIDR622DP-T1-RE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs SOT669 150V 56.7A N-CH MOSFET
MOSFETs SOT669 150V 56.7A N-CH MOSFET
auf Bestellung 303 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 5.32 EUR |
| 10+ | 3.45 EUR |
| 100+ | 2.43 EUR |
| 500+ | 2.02 EUR |
| 1000+ | 1.92 EUR |
| 3000+ | 1.87 EUR |