SIDR668ADP-T1-RE3 Vishay Siliconix

Description: MOSFET N-CH 100V 23.3A/104A PPAK, Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® SO-8DC, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 6.25W (Ta), 125W (Tc), Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 23.3A (Ta), 104A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).