SIE818DF-T1-E3 Vishay Semiconductors
auf Bestellung 29 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.72 EUR |
| 10+ | 6.04 EUR |
| 100+ | 4.84 EUR |
| 500+ | 4.14 EUR |
| 1000+ | 3.5 EUR |
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Technische Details SIE818DF-T1-E3 Vishay Semiconductors
Description: MOSFET N-CH 75V 60A 10POLARPAK, Packaging: Tape & Reel (TR), Package / Case: 10-PolarPAK® (L), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 16A, 10V, Power Dissipation (Max): 5.2W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 10-PolarPAK® (L), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 38 V.
Weitere Produktangebote SIE818DF-T1-E3
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SIE818DF-T1-E3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 75V 60A 10POLARPAKPackaging: Tape & Reel (TR) Package / Case: 10-PolarPAK® (L) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 16A, 10V Power Dissipation (Max): 5.2W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 10-PolarPAK® (L) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 38 V |
Produkt ist nicht verfügbar |
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SIE818DF-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 75V 60A 10POLARPAK Packaging: Cut Tape (CT) Package / Case: 10-PolarPAK® (L) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 16A, 10V Power Dissipation (Max): 5.2W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 10-PolarPAK® (L) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 38 V |
Produkt ist nicht verfügbar |