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SIE882DF-T1-GE3

SIE882DF-T1-GE3 Vishay Siliconix

sie882df.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 60A 10POLARPAK
Packaging: Cut Tape (CT)
Package / Case: 10-PolarPAK® (L)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 20A, 10V
Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 10-PolarPAK® (L)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 12.5 V
auf Bestellung 160 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.87 EUR
10+ 3.23 EUR
100+ 2.57 EUR
Mindestbestellmenge: 5
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Technische Details SIE882DF-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 25V 60A 10POLARPAK, Packaging: Tape & Reel (TR), Package / Case: 10-PolarPAK® (L), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 1.4mOhm @ 20A, 10V, Power Dissipation (Max): 5.2W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 10-PolarPAK® (L), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 12.5 V.

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SIE882DF-T1-GE3 SIE882DF-T1-GE3 Hersteller : Vishay / Siliconix sie882df.pdf MOSFET 25V Vds 20V Vgs PolarPAK
auf Bestellung 452 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
9+5.82 EUR
11+ 5.02 EUR
100+ 4.03 EUR
250+ 3.87 EUR
500+ 3.33 EUR
1000+ 2.89 EUR
3000+ 2.86 EUR
Mindestbestellmenge: 9
SIE882DF-T1-GE3 SIE882DF-T1-GE3 Hersteller : Vishay Siliconix sie882df.pdf Description: MOSFET N-CH 25V 60A 10POLARPAK
Packaging: Tape & Reel (TR)
Package / Case: 10-PolarPAK® (L)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 20A, 10V
Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 10-PolarPAK® (L)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 12.5 V
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