SIGC12T60NCX1SA3 Infineon Technologies
Hersteller: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 10 A
Test Condition: 300V, 10A, 27Ohm, 15V
Td (on/off) @ 25°C: 21ns/110ns
IGBT Type: NPT
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
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Technische Details SIGC12T60NCX1SA3 Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER, Current - Collector Pulsed (Icm): 30 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 10 A, Test Condition: 300V, 10A, 27Ohm, 15V, Td (on/off) @ 25°C: 21ns/110ns, IGBT Type: NPT, Supplier Device Package: Die, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: Die, Packaging: Bulk.