SIGC54T60R3EX7SA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: IGBT 3 CHIP 600V 100A WAFER
Current - Collector Pulsed (Icm): 300 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 100A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
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Technische Details SIGC54T60R3EX7SA1 Infineon Technologies
Description: IGBT 3 CHIP 600V 100A WAFER, Current - Collector Pulsed (Icm): 300 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 100 A, Part Status: Active, IGBT Type: Trench Field Stop, Supplier Device Package: Die, Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 100A, Input Type: Standard, Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: Die, Packaging: Bulk.