SIHA12N50E-E3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 500V 10.5A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V
auf Bestellung 995 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.87 EUR |
| 10+ | 2.65 EUR |
| 100+ | 1.88 EUR |
| 500+ | 1.51 EUR |
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Technische Details SIHA12N50E-E3 Vishay Siliconix
Description: MOSFET N-CH 500V 10.5A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V, Power Dissipation (Max): 32W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220 Full Pack, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V.
Weitere Produktangebote SIHA12N50E-E3 nach Preis ab 1.33 EUR bis 4.33 EUR
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SIHA12N50E-E3 | Hersteller : Vishay / Siliconix |
MOSFETs 500V Vds 30V Vgs TO-220 FULLPAK |
auf Bestellung 494 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHA12N50E-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 500V 10.5A 3-Pin(3+Tab) TO-220FP |
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| SIHA12N50E-E3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 6.6A; Idm: 21A; 32W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 32W Case: TO220FP Mounting: THT Kind of package: tube Gate charge: 50nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 21A Drain-source voltage: 500V Drain current: 6.6A On-state resistance: 0.38Ω Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHA12N50E-E3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 6.6A; Idm: 21A; 32W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 32W Case: TO220FP Mounting: THT Kind of package: tube Gate charge: 50nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 21A Drain-source voltage: 500V Drain current: 6.6A On-state resistance: 0.38Ω |
Produkt ist nicht verfügbar |