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SIHA150N60E-GE3

SIHA150N60E-GE3 Vishay Siliconix

siha150n60e.pdf Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET THIN-LEAD
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 100 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.72 EUR
10+ 4.81 EUR
100+ 3.89 EUR
500+ 3.46 EUR
1000+ 2.96 EUR
2000+ 2.79 EUR
Mindestbestellmenge: 4
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Technische Details SIHA150N60E-GE3 Vishay Siliconix

Description: E SERIES POWER MOSFET THIN-LEAD, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V, Power Dissipation (Max): 179W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220 Full Pack, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 100 V.

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SIHA150N60E-GE3 SIHA150N60E-GE3 Hersteller : Vishay / Siliconix siha150n60e.pdf MOSFET 600Vds 30V Vgs TO-220
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