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SIHA15N60E-GE3

SIHA15N60E-GE3 Vishay / Siliconix


siha15n60e.pdf Hersteller: Vishay / Siliconix
MOSFETs TO220 600V 15A N-CH MOSFET
auf Bestellung 815 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.39 EUR
10+3.89 EUR
100+2.73 EUR
500+2.41 EUR
1000+2.16 EUR
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Technische Details SIHA15N60E-GE3 Vishay / Siliconix

Description: N-CHANNEL 600V, Packaging: Tape & Reel (TR), Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V, Power Dissipation (Max): 34W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220 Full Pack, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V.

Weitere Produktangebote SIHA15N60E-GE3 nach Preis ab 4.71 EUR bis 5.77 EUR

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Preis
SIHA15N60E-GE3 SIHA15N60E-GE3 Hersteller : Vishay Siliconix siha15n60e.pdf Description: N-CHANNEL 600V
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.77 EUR
10+5.42 EUR
100+5.24 EUR
500+4.71 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SIHA15N60E-GE3 SIHA15N60E-GE3 Hersteller : Vishay Siliconix siha15n60e.pdf Description: N-CHANNEL 600V
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V
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Im Einkaufswagen  Stück im Wert von  UAH