SIHA18N60E-E3 Vishay / Siliconix
auf Bestellung 983 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 5 EUR |
| 10+ | 4.21 EUR |
| 25+ | 3.96 EUR |
| 100+ | 3.4 EUR |
| 250+ | 3.2 EUR |
| 500+ | 3.03 EUR |
| 1000+ | 2.57 EUR |
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Technische Details SIHA18N60E-E3 Vishay / Siliconix
Description: MOSFET N-CHANNEL 600V 18A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 202mOhm @ 9A, 10V, Power Dissipation (Max): 34W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220 Full Pack, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V.
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| SIHA18N60E-E3 | Hersteller : Vishay |
 EL Series Power MOSFET |
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SIHA18N60E-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CHANNEL 600V 18A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 202mOhm @ 9A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V |
Produkt ist nicht verfügbar |