SIHA18N60E-E3 Vishay / Siliconix
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.29 EUR |
| 10+ | 4.93 EUR |
| 100+ | 4.06 EUR |
| 500+ | 3.42 EUR |
| 1000+ | 3 EUR |
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Technische Details SIHA18N60E-E3 Vishay / Siliconix
Description: MOSFET N-CHANNEL 600V 18A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 202mOhm @ 9A, 10V, Power Dissipation (Max): 34W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220 Full Pack, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V.
Weitere Produktangebote SIHA18N60E-E3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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SIHA18N60E-E3 | Vishay Siliconix |
 Description: MOSFET N-CHANNEL 600V 18A TO220Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 202mOhm @ 9A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
SIHA18N60E-E3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 176mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 46nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SIHA18N60E-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CHANNEL 600V 18A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 202mOhm @ 9A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
Description: MOSFET N-CHANNEL 600V 18A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 202mOhm @ 9A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHA18N60E-E3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 176mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 46nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 176mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 46nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH