auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.64 EUR |
| 10+ | 5.39 EUR |
| 25+ | 5.07 EUR |
| 100+ | 3.91 EUR |
| 250+ | 3.85 EUR |
| 500+ | 3.24 EUR |
| 1000+ | 3.22 EUR |
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Technische Details SIHA21N60EF-GE3 Vishay / Siliconix
Description: N-CHANNEL 600V, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 176mOhm @ 11A, 10V, Power Dissipation (Max): 35W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220 Full Pack, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 100 V.
Weitere Produktangebote SIHA21N60EF-GE3 nach Preis ab 2.95 EUR bis 8.08 EUR
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SIHA21N60EF-GE3 | Hersteller : Vishay Siliconix |
 Description: N-CHANNEL 600VPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 176mOhm @ 11A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 100 V |
auf Bestellung 1963 Stücke: Lieferzeit 10-14 Tag (e) |
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