SIHA21N80AE-GE3 VISHAY
Hersteller: VISHAY
Description: VISHAY - SIHA21N80AE-GE3 - Leistungs-MOSFET, n-Kanal, 800 V, 7.5 A, 0.205 ohm, TO-220FP, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 800V
rohsCompliant: YES
Dauer-Drainstrom Id: 7.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 33W
Bauform - Transistor: TO-220FP
Anzahl der Pins: 3Pin(s)
Produktpalette: E
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.205ohm
SVHC: To Be Advised
| Anzahl | Privatkunde |
|---|---|
| 53+ | 4.8 EUR |
| 63+ | 3.74 EUR |
| 100+ | 2.51 EUR |
| 500+ | 2.13 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIHA21N80AE-GE3 VISHAY
Description: VISHAY - SIHA21N80AE-GE3 - Leistungs-MOSFET, n-Kanal, 800 V, 7.5 A, 0.205 ohm, TO-220FP, Durchsteckmontage, tariffCode: 85412900, Transistormontage: Durchsteckmontage, Drain-Source-Spannung Vds: 800V, rohsCompliant: YES, Dauer-Drainstrom Id: 7.5A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 4V, euEccn: NLR, Verlustleistung: 33W, Bauform - Transistor: TO-220FP, Anzahl der Pins: 3Pin(s), Produktpalette: E, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.205ohm, SVHC: To Be Advised.
Weitere Produktangebote SIHA21N80AE-GE3 nach Preis ab 2.64 EUR bis 7.31 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SIHA21N80AE-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 800V 7.5A TO220 Input Capacitance (Ciss) (Max) @ Vds: 1388 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220 Full Pack Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 235mOhm @ 11A, 10V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
auf Bestellung 1001 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
SIHA21N80AE-GE3 | Vishay / Siliconix |
MOSFETs TO220 800V 7.5A N-CH MOSFET |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SIHA21N80AE-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 7.5A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1388 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 235mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 800V 7.5A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1388 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 235mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 1001 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.65 EUR |
| 10+ | 4.7 EUR |
| 100+ | 3.74 EUR |
| 500+ | 3.17 EUR |
| 1000+ | 2.69 EUR |
| SIHA21N80AE-GE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs TO220 800V 7.5A N-CH MOSFET
MOSFETs TO220 800V 7.5A N-CH MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.31 EUR |
| 10+ | 4.8 EUR |
| 100+ | 3.58 EUR |
| 500+ | 3 EUR |
| 1000+ | 2.76 EUR |
| 2000+ | 2.64 EUR |